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Company BLOG

Supply Infineon AIKBE50N65RF5 Automotive SiC Hybrid Discrete IGBT Transistor

Supply Infineon AIKBE50N65RF5 Automotive SiC Hybrid Discrete IGBT Transistor

Description
AIKBE50N65RF5 has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC.

Features
650 V breakdown voltage
IC = 50 A
Best-in-class efficiency
Trenchstop™ 5 fast-switching IGBT
CoolSiC™ Schottky diode G5
Low gate charge QG
Maximum junction temperature Tvjmax = 175°C
Kelvin emitter connection

Benefits
Highest reliability against environmental conditions
Increased system efficiency
Best performance/cost ratio for hard switching topologies
Supporting bi-directional On-Board Charger designs

Applications
On-board charger
DC/DC converter

Pub Time : 2024-02-21 11:39:08 >> News list

Contact Details

ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Mr. Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

company blog about Supply Infineon AIKBE50N65RF5 Automotive SiC Hybrid Discrete IGBT Transistor

Integrated Circuit Chip

BT IC

Automotive IGBT Modules

Microcontroller MCU

GaN IC

AI Processor Chip

Field Programmable Gate Array

Ethernet IC

Connectors

Memory IC Chip

Sensor IC

IoT Chip

5G Module

WIFI 6 Chip

Iphone IC Chip

Wireless Communication Module

Temperature Controller Thermostat

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