company blog about Supply ST STW48N60M6 600V MDmesh™ M6 N-Channel Power MOSFET Transistors

Supply ST STW48N60M6 600V MDmesh™ M6 N-Channel Power MOSFET Transistors

[Shenzhen Mingjiada Electronics Co., Ltd.] Long Term Supply (ST) STW48N60M6 600V MDmesh™ M6 N-Channel Power MOSFET Transistors, Below are the product details for the transistor STW48N60M6:

Part Number:STW48N60M6

Package: TO-247-3

Tyepe: N-Channel Power MOSFET Transistors

STW48N60M6 is a 600V N-channel power MOSFET featuring ST's MDmesh™ M6 technology. This technology optimises switching performance and on-resistance (RDS(on)) for high-efficiency power conversion applications.

STW48N60M6——The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-

application efficiency.

Product Attributes Of STW48N60M6

Series: MDmesh™ M6
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C
39A (Tc): Drive Voltage (Max Rds On, Min Rds On)
10V: Rds On (Max) @ Id, Vgs
69mOhm @ 19.5A, 10V: Vgs(th) (Max) @ Id
4.75V @ 250µAGate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Vgs (Max): ±25V
Input Capacitance (Ciss) (Max) @ Vds: 2578 pF @ 100 V
Power Dissipation (Max): 250W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

STW48N60M6——Electrical Characteristics
Drain-source voltage (VDS): 600V
Gate Source Voltage (VGS): ±30V
Continuous Drain Current (ID): 48A
Impulse Drain Current (IDM): 192A
Power Dissipation (PD): 330W

STW48N60M6——Thermal Characteristics
Junction to Ambient Thermal Resistance (RthJA): 40°C/W
Junction to Case Thermal Resistance (RthJC): 0.5°C/W

Features Of STW48N60M6

Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected

Applications Of STW48N60M6
Switching applications
LLC converters
Boost PFC converters

Advantages Of STW48N60M6
High efficiency: Low on-resistance and fast switching characteristics reduce energy loss.
High reliability: Designed for high-power and high-frequency applications
Excellent thermal performance: TO-247 package provides good heat dissipation

The STW48N60M6 is a high performance power MOSFET transistor for a wide range of high efficiency power conversion applications. Its low on-resistance and fast switching characteristics enable it to perform well in high power and high frequency applications.

Mingjiada supplies STW48N60M6 transistors for a long time, for more information about STW48N60M6, please check the official website of Mingjiaoa Electronics (https://www.integrated-ic.com/).