Part Number:SCT4062KRC15
Qg - Gate Charge:64 nC
Vgs (Max):+21V, -4V
Part Number:SCT4018KW7TL
Technology:SiCFET (Silicon Carbide)
Rds On:18 mOhms
Part Number:SCT4018KRC15
RDS(on) (Typ.):18mΩ
FET Type:N-Channel
Part Number:SCT4026DEC11
RDS(on) (Typ.):26mΩ
Range of storage temperature:-40°C to +175°C
Part Number:BUK6Y33-60PX
Vgs - Gate-Source Voltage:- 20 V, + 20 V
Transistor Polarity:P-Channel
Part Number:BUK6Y24-40PX
Mounting Style:SMD/SMT
Number of Channels:1 Channel
Part Number:BUK6Y19-30PX
Package / Case:LFPAK56, Power-SO8
Series:Automotive, AEC-Q101, TrenchMOS™
Part Number:BUK6Y10-30PX
Vgs(th) (Max) @ Id:3V @ 250µA
Pd - Power Dissipation:110 W
Part Number:BUK7Y7R0-40HX
Drive Voltage (Max Rds On, Min Rds On):10V
Fall Time:4.4 ns
Part Number:BUK7S1R5-40HJ
Transistor Type:1 N-Channel
Supplier Device Package:LFPAK88 (SOT1235)
Part Number:BUK9K52-60RAX
Package / Case:LFPAK-56D-8
Technology:Si
Part Number:BUK9K25-40RAX
Input Capacitance (Ciss) (Max) @ Vds:701pF @ 25V
Operating Temperature:-55°C ~ 175°C (TJ)