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SiC Trench Power MOSFETs Transistors IMW65R027M1H TO-247-3 Integrated Circuit Chip

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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High Quality and Reliable Performance: "The electronic components we received from [ShenZhen Mingjiada Electronics Co.,Ltd.] are of high quality and have shown reliable performance in our devices."

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Competitive Pricing: The pricing offered by is very competitive, making it an excellent choice for our procurement needs.

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Great prices, fast delivery, and top-notch customer service. ShenZhen Mingjiada Electronics Co.,Ltd. never disappoints!

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Reliable components, fast shipping, and excellent support. ShenZhen Mingjiada Electronics Co.,Ltd is our go-to partner for all electronic needs!

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SiC Trench Power MOSFETs Transistors IMW65R027M1H TO-247-3 Integrated Circuit Chip

SiC Trench Power MOSFETs Transistors IMW65R027M1H TO-247-3 Integrated Circuit Chip
SiC Trench Power MOSFETs Transistors IMW65R027M1H TO-247-3 Integrated Circuit Chip SiC Trench Power MOSFETs Transistors IMW65R027M1H TO-247-3 Integrated Circuit Chip

Large Image :  SiC Trench Power MOSFETs Transistors IMW65R027M1H TO-247-3 Integrated Circuit Chip

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IMW65R027M1H
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-247-3
Delivery Time: 5-8 work days
Payment Terms: T/T, L/C, Western Union

SiC Trench Power MOSFETs Transistors IMW65R027M1H TO-247-3 Integrated Circuit Chip

Description
Part Number: IMW65R027M1H Series: CoolSIC™ M1
FET Type: N-Channel Drain To Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Mounting Type: Through Hole

SiC Trench Power MOSFETs Transistors IMW65R027M1H TO-247-3 Integrated Circuit Chip​

 

Product Description Of IMW65R027M1H

IMW65R027M1H is 650V CoolSiC M1 SiC Trench Power Device, N-Channel Single FETs MOSFETs Transistors.

 

Specification Of IMW65R027M1H

Part Number IMW65R027M1H
Technology 
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
34mOhm @ 38.3A, 18V
Vgs(th) (Max) @ Id
5.7V @ 11mA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 18 V
Vgs (Max)
+23V, -5V
Input Capacitance (Ciss) (Max) @ Vds
2131 pF @ 400 V
Power Dissipation (Max)
189W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
PG-TO247-3-41


Applications Of IMW65R027M1H

  • EV charging infrastructure
  • Energy storage and battery for mation
  • Class Damplifiers

 

Other Supply Product Types

Part Number Package
CY9BF324MBGL-GK9E1 QFP
SPC5777MK0MVA8 FBGA-512
SPC5634MF2MLQ80 LQFP-144
SPC5645SF1VLT LQFP208
SPC5602PEF0MLL6 LQFP100
SPC5748CBK0AMKU6 HTSSOP14

 

FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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