Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:400A
Rds On (Max) @ Id, Vgs:3.7mOhm @ 400A, 15V
Part Number:F3L400R10W3S7B11BPSA1
IGBT Type:Trench
Product Status:Active
Voltage - Collector Emitter Breakdown (Max):950 V
Current - Collector (Ic) (Max):310 A
Power - Max:20 mW
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:200A
Part Number:FF300R08W2P2B11ABOMA1
Voltage - Collector Emitter Breakdown (Max):750 V
Current - Collector (Ic) (Max):200 A
Part Number:FS03MR12A6MA1BBPSA1
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V (1.2kV)
Part Number:IXYN50N170CV1
Maximum Gate Emitter Voltage:- 20 V, 20 V
Pd - Power Dissipation:880 W
Part Number:IXYN140N120A4
Current - Collector (Ic) (Max):380 A
Gate-Emitter Leakage Current:200 nA
Part Number:IXYN110N120C4
Current - Collector Cutoff:50 µA
Input Capacitance:5.42 nF @ 25 V
Part Number:MSCSM120DDUM31CTBL2NG
Id - Continuous Drain Current:79 A
Pd - Power Dissipation:310 W
Part Number:MSCSM120DUM31CTBL1NG
Vf - Forward Voltage:1.5 V at 30 A
Vr - Reverse Voltage:1.2 kV
Part Number:MSCDR90A160BL1NG
Diode Configuration:1 Pair Series Connection
Technology:Standard
