Product Details:
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Part Number: | IMZA65R048M1H | VGS: | -5 - 23 V |
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Gate-source Leakage Current: | 100 NA | Zero Gate Voltage Drain Current: | 150 µA |
Gate Resistance: | 6.0 Ω | Open Drain: | 1MHz |
Transistors IMZA65R048M1H Single FET MOSFET 650V 20A 75W TO-247-4 Package
Product Description Of IMZA65R048M1H
IMZA65R048M1H is High-Electron-Mobility Transistors (HEMTs) offer fast turn-on and turn-off speeds at minimum switching losses.
Specification Of IMZA65R048M1H
Part Number: |
IMZA65R048M1H |
Virtual Junction Temperature: |
-55- 175 °C |
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Drain-Source Voltage: |
1200 V |
Mounting Torque: |
0.6 Nm |
Body Diode Forward Voltage: |
5.2 V |
Zero Gate Voltage Drain Current: |
165 µA |
Features Of IMZA65R048M1H
Enhancement mode transistor, normally OFF switch
GaN HEMT in small form factor leadless SMD package
GaN-tailored qualification
Ultra-fast switching
Other Supply Product Types
Part Number |
Package |
SPC5606BK0VLL6 |
LQFP100 |
SPC5668GF1AVMG |
BGA208 |
SPC5603BK0VLH4 |
QFP64 |
SPC5643AF0MVZ2 |
BGA |
SPC5643AF0MLU2 |
LQFP176 |
MSC040SMA120 |
TO-247 |
FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.
Contact Person: Sales Manager
Tel: 86-13410018555
Fax: 86-0755-83957753