company blog about Infineon IDW20G120C5B 1200V 20A Silicion Carbide Schottky Diode

Infineon IDW20G120C5B 1200V 20A Silicion Carbide Schottky Diode

Shenzhen Mingjiada Electronics Co., Ltd., as a leading global supplier of electronic components, has been consistently stocking and supplying the Infineon IDW20G120C5B—a 1200V/20A fifth-generation CoolSiC™ silicon carbide Schottky diode.

IDW20G120C5B Product Overview and Technical Features:

The IDW20G120C5B is the fifth-generation silicon carbide Schottky diode in Infineon's CoolSiC™ series, featuring a standard TO-247-3 package and designed specifically for high-power, high-frequency applications. As a leading-edge technology representative of silicon carbide Schottky barrier diodes, the IDW20G120C5B product integrates Infineon's thin wafer technology introduced in the second-generation product with innovative merged pn junction technology, significantly enhancing the diode's surge current capability and system reliability.

In terms of basic parameters, the IDW20G120C5B has a rated value of 1200V repetitive reverse voltage (Vrrm) and 20A forward current (If), with a forward voltage drop (Vf) of just 1.4V at 10A current, demonstrating excellent conductivity. In terms of reverse characteristics, the diode has extremely low reverse leakage current (Ir) at 1200V reverse voltage, with typical values as low as 6-12μA, ensuring efficient system operation.

The technical highlights of this IDW20G120C5B silicon carbide Schottky diode are primarily reflected in the following aspects:

No reverse recovery charge (Qrr=0): Compared to traditional silicon-based diodes, it completely eliminates reverse recovery losses, making it particularly suitable for high-frequency switching applications

Mild forward voltage temperature dependency: Maintains stable performance across different operating temperatures

Industry-leading surge current capability (Ifsm=190A): Capable of withstanding short-term overload conditions

Excellent thermal performance: Utilises an optimised packaging design to ensure efficient heat dissipation

The IDW20G120C5B has a wide operating temperature range from -55°C to +175°C, making it suitable for applications in various harsh environmental conditions. These outstanding technical features make the IDW20G120C5B an ideal choice for high-efficiency power conversion systems.

IDW20G120C5B key technical parameters:

Reverse voltage rating (Vr): 1200V

Average rectified current (Io): 20A (continuous)

Forward voltage drop (Vf): 1.4V @ 10A

Reverse leakage current (Ir): 6μA @ 1200V

Surge current (Ifsm): 190A

Package: TO-247-3 (through-hole mounting)

Operating temperature range: -55°C to +175°C

Key Features of IDW20G120C5B:

No reverse recovery charge (Qrr=0): Reduces switching losses and improves system efficiency.

Low forward voltage drop (Vf): Reduces conduction losses, suitable for high-frequency switching applications.

Positive temperature coefficient (Vf increases slightly with temperature): Aids current balancing when used in parallel.

Excellent surge current capability: Enhances system reliability.

Low EMI characteristics: Suitable for applications sensitive to electromagnetic interference.

IDW20G120C5B Product Core Advantages and Application Areas:

The IDW20G120C5B silicon carbide Schottky diode demonstrates strong competitiveness in multiple high-growth market segments due to its exceptional electrical performance and system-level advantages. Compared to traditional silicon-based power diodes, this product achieves significant improvements in system efficiency, power density, and reliability.

Core Competitive Advantages of IDW20G120C5B:

Highest System Efficiency: Thanks to the superior properties of silicon carbide material and a design with no reverse recovery charge, IDW20G120C5B significantly reduces switching losses, particularly in high-frequency applications. Test data shows that systems using this diode can achieve a 1-3 percentage point increase in overall efficiency, translating to substantial energy savings for high-power applications.

Enhanced power density: Due to reduced switching losses and optimised thermal performance, systems can adopt higher switching frequencies, thereby reducing the size and weight of passive components (such as inductors and transformers) and achieving higher power density. This feature is particularly important for space-constrained applications (such as electric vehicles).

Enhanced system reliability: Silicon carbide material inherently offers higher operating temperature capability and better thermal conductivity. Combined with Infineon's optimised packaging technology, the IDW20G120C5B demonstrates more stable performance during long-term operation, extending the overall system lifespan.

Reduced electromagnetic interference (EMI): The absence of reverse recovery characteristics minimises voltage and current oscillations during switching, thereby reducing high-frequency noise radiation and simplifying EMI filtering design.

Typical application areas for the IDW20G120C5B:

Photovoltaic inverter systems: particularly suitable for boost and inverter circuits in string inverters, significantly improving conversion efficiency and reducing system costs

Electric vehicle charging equipment: including on-board chargers (OBC) and DC fast-charging stations, where the high-frequency characteristics of silicon carbide diodes help reduce equipment size and weight

Industrial motor drives: Used in rectifier and freewheeling circuits of variable frequency drives and servo drives, improving control accuracy and energy efficiency

Uninterruptible power supplies (UPS): Replacing traditional silicon diodes in high-performance UPS systems, reducing losses and increasing power density

Renewable energy generation systems: Including wind power converters and energy storage systems, where silicon carbide devices can handle the high variability of renewable energy inputs