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NXP RF Amplifier A2I20D020NR1 LDMOS Wideband Integrated Power Amplifiers

NXP RF Amplifier A2I20D020NR1 LDMOS Wideband Integrated Power Amplifiers

latest company news about NXP RF Amplifier A2I20D020NR1 LDMOS Wideband Integrated Power Amplifiers 0

Product Description
A2I20D020NR1 wideband integrated circuit is designed with on-chip matching that makes it usable from 1400 to 2200 MHz. This multi-stage structure is rated for 20 to 32 V operation and covers all typical cellular base station modulation formats.

Product Attributes
Frequency:1.4GHz ~ 2.2GHz
Gain:35dB
RF Type:W-CDMA
Voltage - Supply:28V
Test Frequency:2.2GHz
Mounting Type:Surface Mount
Package:TO-270WB-17

Features
Extremely wide RF bandwidth
RF decoupled drain pins reduce overall board space
On-Chip matching (50 ohm input, DC blocked)
Integrated quiescent current temperature compensation withenable/disable function

Pub Time : 2024-07-17 12:04:56 >> News list

Contact Details

ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Mr. Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

company blog about NXP RF Amplifier A2I20D020NR1 LDMOS Wideband Integrated Power Amplifiers

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