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IMBG65R260M1H 650V 6A N-Channel Silicon Carbide Single FET MOSFET Integrated Circuit Chip Surface Mount TO-263-8

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IMBG65R260M1H 650V 6A N-Channel Silicon Carbide Single FET MOSFET Integrated Circuit Chip Surface Mount TO-263-8

IMBG65R260M1H 650V 6A N-Channel Silicon Carbide Single FET MOSFET Integrated Circuit Chip Surface Mount TO-263-8
IMBG65R260M1H 650V 6A N-Channel Silicon Carbide Single FET MOSFET Integrated Circuit Chip Surface Mount TO-263-8 IMBG65R260M1H 650V 6A N-Channel Silicon Carbide Single FET MOSFET Integrated Circuit Chip Surface Mount TO-263-8

Large Image :  IMBG65R260M1H 650V 6A N-Channel Silicon Carbide Single FET MOSFET Integrated Circuit Chip Surface Mount TO-263-8

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IMBG65R260M1H
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: TO-263-8
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union
Contact Now

IMBG65R260M1H 650V 6A N-Channel Silicon Carbide Single FET MOSFET Integrated Circuit Chip Surface Mount TO-263-8

Description
Part Number: IMBG65R260M1H Channel Mode: Enhancement
Product Category: MOSFET Supplier Device Package: PG-TO263-7-12
Mounting Type: Surface Mount Technology: SiC
Highlight:

650V MOSFET

,

6A N-Channel Silicon Carbide Single FET

,

Surface Mount Integrated Circuit Chip

IMBG65R260M1H Integrated Circuit Chip N-Channel Silicon Carbide Single FETs MOSFETs Transistors TO-263-8
Product Overview Of IMBG65R

N-Channel IMBG65R Silicon Carbide Single FETs MOSFETs Transistors TO-263-8 enables simplified and cost-effective deployment of the highest system efficiency.

Product Description Of IMBG65R

IMBG65R is a 650V N-Channel MOSFETs Transistor designed for high-efficiency system applications.

Specifications Of IMBG65R
Parameter Value
Part Number IMBG65R260M1H
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 346 mOhms
Vgs - Gate-Source Voltage -5 V, +23 V
Vgs th - Gate-Source Threshold Voltage 5.7 V
Qg - Gate Charge 22 nC
Minimum Operating Temperature -55°C
Maximum Operating Temperature +175°C
Pd - Power Dissipation 65 W
Applications Of IMBG65R
  • Telecom and Server SMPS
  • UPS (uninterruptable power supplies)
  • Solar PV inverters
Product Tags
IMBG65R260M1H, IMBG65R260M1, IMBG65R260M, IMBG65R260, IMBG65R26, IMBG65R2, IMBG65R
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CY8C4248FNI-BL593 WLCSP-76
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CY8C4128LQI-BL593 QFN-56
CYW20734UA2KFFB3G FBGA-90
CYW88373CUBG BGA
CYW20703UA1KFFB1G FCBGA-49
BGA6L1BN6E6327XTSA1 TSNP-6
CYW4343W1KUBG WLBGA-74
CYW55570MIUBG BGA
CYW89570CWBG FCFBGA-289
BGS12WN6E6329XTSA1 PG-TSNP-6
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Frequently Asked Questions
Are your products original?
Yes, all products are original, new original import is our purpose.
Which Certificates do you have?
We are ISO 9001:2015 Certified Company and member of ERAI.
Can you support small quantity order or sample? Is the sample free?
Yes, we support sample order and small order. Sample cost is different according to your order or project.
How to ship my order? Is it safe?
We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
What about the lead time?
We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

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Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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