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IGT60R070D1 GaN IC 600V Power Transistor with 55 mΩ RDS(on) and Ultrafast Switching for High Efficiency

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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IGT60R070D1 GaN IC 600V Power Transistor with 55 mΩ RDS(on) and Ultrafast Switching for High Efficiency

IGT60R070D1 GaN IC 600V Power Transistor with 55 mΩ RDS(on) and Ultrafast Switching for High Efficiency
IGT60R070D1 GaN IC 600V Power Transistor with 55 mΩ RDS(on) and Ultrafast Switching for High Efficiency IGT60R070D1 GaN IC 600V Power Transistor with 55 mΩ RDS(on) and Ultrafast Switching for High Efficiency IGT60R070D1 GaN IC 600V Power Transistor with 55 mΩ RDS(on) and Ultrafast Switching for High Efficiency

Large Image :  IGT60R070D1 GaN IC 600V Power Transistor with 55 mΩ RDS(on) and Ultrafast Switching for High Efficiency

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IGT60R070D1
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-HSOF-8-3
Delivery Time: 3-5 work days
Payment Terms: TT
Supply Ability: 10000 Pieces per Day

IGT60R070D1 GaN IC 600V Power Transistor with 55 mΩ RDS(on) and Ultrafast Switching for High Efficiency

Description
Part Number: IGT60R070D1 ID (@ TA=25°C) Max: 31 A
IDpuls (@25°C) Max: 60 A Ptot Max: 125 W
QG: 5.8 NC RDS (on) (typ): 55 MΩ

IGT60R070D1 GaN IC IGT60R070D1ATMA4 CoolGaN™ 600V E-mode Power Transistor

IGT60R070D1 enables a more compact topology and higher efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, servers, telecom, renewables and numerous other applications.

Features
  • E-mode HEMT - normally OFF
  • Ultrafast switching
  • No reverse-recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • JEDEC qualified (JESD47, JESD22)
  • Low dynamic RDS(on)
  • Bottom-side cooled
Benefits
  • Improves system efficiency
  • Improves power density
  • Enables higher operating frequency
  • System cost reduction savings
  • Reduces EMI
Applications
  • Medium voltage IBC (48 V)
  • Battery energy storage (BESS)
  • DIN rail power supply solutions
  • Uninterruptible power supplies (UPS)
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Frequently Asked Questions
Are your products original?
Yes, all products are original, new original import is our purpose.
Which Certificates do you have?
We are ISO 9001:2015 Certified Company and member of ERAI.
Can you support small quantity order or sample? Is the sample free?
Yes, we support sample order and small order. Sample cost is different according to your order or project.
How to ship my order? Is it safe?
We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
What about the lead time?
We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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