A5G26H605W19NR3 Integrated Circuit Chip N-Channel Enhancement MOSFET Transistor 85 W for 2496 to 2690 MHz with High Terminal Impedances

A5G26H605W19N 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

• High terminal impedances for optimal broadband performance
• Advanced high performance in-package Doherty
• Improved linearized error vector magnitude with next generation signal
• Able to withstand extremely high output VSWR and broadband operating conditions
• Plastic package
• RoHS compliant

• 15+ years experience for electronic components
• Secure Ordering
• Excellent Feedback
• Delivery Date Guaranteed
• 100% Low Price Guaranteed
• Export to 108 countries, customer satisfaction rate: 99.9%

Shenzhen Mingjiada Electronics Co., Ltd. is an authorized independent distributor of electronic components of world-renowned brands. Founded in Shenzhen in 1996, Mingjiada has successively established branches in Hong Kong, Japan, Russia, and Taiwan. We have passed certifications carried out in accordance with ISO9001:2014 for quality management systems and ISO14001:2014 for environmental management systems.

With an experienced team in sales, R&D and management, we specialize in distributing products from more than 500 well-known manufacturers. Adhering to the tenet of "maximizing benefits for customers", we offer a complete range of products and also provide high-quality and responsive service with our professional logistics and customer service teams. Mingjiada has developed into a major (authorized and non-authorized) electronic component distributor that is well known in domestic and foreign IC markets.