Memory IC Chip MT53E256M32D2DS-053 WT:B 8Gbit SDRAM-Mobile LPDDR4 Memory Chips

Memory IC Chip MT53E256M32D2DS-053 WT:B 8Gbit SDRAM-Mobile LPDDR4 Memory Chips

Product Description Of MT53E256M32D2DS-053 WT:B

MT53E256M32D2DS-053 WT:B is 8Gbit SDRAM-Mobile LPDDR4 Memory Chips. The 8Gb Mobile Low-Power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed CMOS, dynamic random-access memory. The device is internally configured with x16 I/O, 8-banks. Each of the x16’s 536,870,912-bit banks is organized as 32,768 rows by 1024 columns by 16 bits.

Specification Of MT53E256M32D2DS-053 WT:B

Features Of MT53E256M32D2DS-053 WT:B

• Frequency range: 2133–10 MHz (data rate range: 4266–20 Mb/s/pin)
• 16n prefetch DDR architecture
• 8 internal banks per channel for concurrent operation
• Single-data-rate CMD/ADR entry
• Bidirectional/differential data strobe per byte lane
• Programmable READ and WRITE latencies (RL/WL)
• Programmable and on-the-fly burst lengths (BL = 16, 32)
• Directed per-bank refresh for concurrent bank operation and ease of command scheduling
• Up to 8.5 GB/s per die
• On-chip temperature sensor to control self refresh rate

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A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.