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IKW75N60T 600V 75A IGBT Transistor TO-247-3 Discrete Integrated Circuit Chip

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China ShenZhen Mingjiada Electronics Co.,Ltd. certification
China ShenZhen Mingjiada Electronics Co.,Ltd. certification
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IKW75N60T 600V 75A IGBT Transistor TO-247-3 Discrete Integrated Circuit Chip

IKW75N60T 600V 75A IGBT Transistor TO-247-3 Discrete Integrated Circuit Chip
IKW75N60T 600V 75A IGBT Transistor TO-247-3 Discrete Integrated Circuit Chip IKW75N60T 600V 75A IGBT Transistor TO-247-3 Discrete Integrated Circuit Chip

Large Image :  IKW75N60T 600V 75A IGBT Transistor TO-247-3 Discrete Integrated Circuit Chip

Product Details:
Place of Origin: CN
Brand Name: Original Factory
Certification: Lead free / RoHS Compliant
Model Number: IKW75N60T
Payment & Shipping Terms:
Minimum Order Quantity: 10
Price: Contact for Sample
Packaging Details: PG-TO247-3
Delivery Time: 5-8 work days
Payment Terms: T/T,L/C,Western Union

IKW75N60T 600V 75A IGBT Transistor TO-247-3 Discrete Integrated Circuit Chip

Description
Part Number: IKW75N60T Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.5 V Maximum Gate Emitter Voltage: - 20 V, 20 V
Continuous Collector Current At 25℃: 80 A Pd - Power Dissipation: 428 W
Highlight:

600V 75A IGBT transistor

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PG-TO247-3 IGBT chip

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discrete IGBT integrated circuit

IKW75N60T Integrated Circuit Chip 600V 75A IGBT Discrete PG-TO247-3 IGBT Transistors
Product Description
The IKW75N60T is a hard-switching 600V, 75A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package. This configuration leads to significant improvement of both static and dynamic performance, achieved through the combination of trench-cell and fieldstop concept. The integration of IGBT with soft recovery emitter controlled diode further minimizes turn-on losses, delivering optimal efficiency through the best compromise between switching and conduction losses.
Specifications
Series TRENCHSTOP™
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 225 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A
Power - Max 428 W
Switching Energy 4.5mJ
Input Type Standard
Gate Charge 470 nC
Td (on/off) @ 25°C 33ns/330ns
Test Condition 400V, 75A, 5Ohm, 15V
Reverse Recovery Time (trr) 121 ns
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3-1
Key Features
  • Lowest VCEsatdrop
  • Low switching losses
  • Positive temp. coeffi. in VCEsat
  • Easy parallel switching capability
  • Very soft, fast recovery diode
  • High ruggedness
  • Temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution
Applications
  • Home appliances
  • Telecommunications infrastructure
  • Photovoltaic systems
  • Motor control and drives
  • Uninterruptible power supplies (UPS)
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Frequently Asked Questions
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample? Is the sample free?
A: Yes, we support sample order and small order. Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship, such as DHL, Fedex, UPS, TNT, EMS. We can also use your suggested forwarder. Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days. If without stock, we will confirm lead time for you based on your order quantity.

Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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