Part Number:FP75R12N2T7BPSA2
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:1.55 V
Part Number:FS75R12KE3BPSA1
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Part Number:FP75R12N2T4BPSA1
Product Type:IGBT Modules
Collector-Emitter Saturation Voltage:1.85 V
Part Number:FS150R12N2T7BPSA2
Voltage - Collector Emitter Breakdown:1200 V
Current - Collector Cutoff:1.2 µA
Part Number:FP100R12N2T7BPSA2
Minimum Operating Temperature:- 40 C
Maximum Operating Temperature:+ 175 C
Part Number:FP150R12N3T7B11BPSA1
Product Category:IGBT Modules
Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 150A
Part Number:FP100R12N2T7B11BPSA1
Series:EconoPIM™ 2
IGBT Type:Trench Field Stop
Part Number:FF6MR12W2M1B11BOMA1
Mounting Type:Chassis Mount
Operating Temperature(Min):-40°C (TJ)
Part Number:FS45MR12W1M1B11BOMA1
Drain to Source Voltage (Vdss):1200V (1.2kV)
Configuration:6 N-Channel (3-Phase Bridge)
Part Number:DF17MR12W1M1HFB68BPSA1
FET Type:N-Channel
Current - Continuous Drain (Id) @ 25°C:45A (Tj)
Part Number:DF8MR12W1M1HFB67BPSA1
Technology:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):1200V
Part Number:DF419MR20W3M1HFB11BPSA1
Isolation test voltage:3.2kV
Stray inductance module(Typ):14nH