China Integrated Circuit Chip

650V N-Channel MOSFET Transistors NTH4L025N065SC1 Through Hole TO-247-4 IC Chips

Part Number:NTH4L025N065SC1

Minimum Operating Temperature:-55°C (TJ)

Pd - Power Dissipation:348 W
N-Channel MOSFET Transistors NTHL020N120SC1 1200V Integrated Circuit Chip TO-247-3

Part Number:NTHL020N120SC1

Rds On (Max) @ Id, Vgs:28mOhm @ 60A, 20V

Input Capacitance (Ciss) (Max) @ Vds:2890 pF @ 800 V
1200V SiC Trench MOSFET IMBG120R045M1H N-Channel MOSFET Transistors TO-263-8

Part Number:IMBG120R045M1H

Short circuit withstand time:3 µs

Turn-off gate voltage:0V
Integrated Circuit Chip IMBG120R060M1H TO-263-8 1200V SiC Trench MOSFET Transistors

Part Number:IMBG120R060M1H

Pulsed drain current:94A

Power dissipation,TC = 25°C:181W
N-Channel IMBG120R220M1H 1200V Silicon Carbide Trench TO-263-8 MOSFET Transistors

Part Number:IMBG120R220M1H

Fall Time:11 ns

Forward Transconductance - Min:1.9 S
Integrated Circuit Chip MSC025SMA120J N-Channel Power MOSFET Transistors

Part Number:MSC025SMA120J

Minimum Operating Temperature:- 55 C

Maximum Operating Temperature:+ 175 C
Silicon Carbide MOSFET Transistors IMW120R140M1H N-Channel 1200V 19A 94W Through Hole

Part Number:IMW120R140M1H

Operating Temperature:-55°C ~ 175°C (TJ)

Polarity:N
ICs Chip MSC025SMA120S 1200 V Silicon Carbide N-Channel MOSFET Transistors

Part Number:MSC025SMA120S

FET Type:N-Channel

Current - Continuous Drain (Id) @ 25°C:89A (Tc)
Integrated Circuit Chip MSC180SMA120B 1200V SiC MOSFET Transistors TO-247-4

Part Number:MSC180SMA120B

Transistor Polarity:N-Channel

Mounting Style:Through Hole
Integrated Circuit Chip MSC090SMA070S 700V SiC MOSFET Transistors TO-268-3

Part Number:MSC090SMA070S

Id - Continuous Drain Current:25 A

Junction-to-case thermal resistance(Typ):1.10W/°C
Silicon Carbide MSC015SMA070B4 N-Channel SiC MOSFET Transistors TO-247-4 IC Chips

Part Number:MSC015SMA070B4

Pulsed drain current:350A

Linear derating factor:3.03W/°C
Transistors IPBE65R075CFD7AATMA1 TO-263-7 Automotive Grade MOSFET Transistors 650V

Part Number:IPBE65R075CFD7AATMA1

Rds On - Drain-Source Resistance:139 mOhms

Vgs - Gate-Source Voltage:- 20 V, + 20 V

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China Integrated Circuit Chip

650V N-Channel MOSFET Transistors NTH4L025N065SC1 Through Hole TO-247-4 IC Chips

N-Channel MOSFET Transistors NTHL020N120SC1 1200V Integrated Circuit Chip TO-247-3

1200V SiC Trench MOSFET IMBG120R045M1H N-Channel MOSFET Transistors TO-263-8

Integrated Circuit Chip IMBG120R060M1H TO-263-8 1200V SiC Trench MOSFET Transistors

N-Channel IMBG120R220M1H 1200V Silicon Carbide Trench TO-263-8 MOSFET Transistors

Integrated Circuit Chip MSC025SMA120J N-Channel Power MOSFET Transistors

Silicon Carbide MOSFET Transistors IMW120R140M1H N-Channel 1200V 19A 94W Through Hole

ICs Chip MSC025SMA120S 1200 V Silicon Carbide N-Channel MOSFET Transistors

Integrated Circuit Chip MSC180SMA120B 1200V SiC MOSFET Transistors TO-247-4

Integrated Circuit Chip MSC090SMA070S 700V SiC MOSFET Transistors TO-268-3

Silicon Carbide MSC015SMA070B4 N-Channel SiC MOSFET Transistors TO-247-4 IC Chips

Transistors IPBE65R075CFD7AATMA1 TO-263-7 Automotive Grade MOSFET Transistors 650V

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