Part Number:STL24N60M6
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
RDS(on) max:209 mΩ
Part Number:SCT011H75G3AG
Drain-source voltage:750 V
Drain current (continuous) at TC = 25 °C:110A
Part Number:SCT018H65G3AG
Package:HU2PAK-7
Gate-source voltage:-10V to 22V
Part Number:IXTH24N50L
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 20 V
Power Dissipation (Max):400W (Tc)
Part Number:MSC040SMA120B
Minimum Operating Temperature:- 55 C
Pd:311 W
Part Number:IMBG65R163M1HXTMA1
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:217mOhm @ 5.7A, 18V
Part Number:IPT020N10N5ATMA1
Power Dissipation (Max):273W (Tc)
FET Type:N-Channel
Part Number:BSZ050N03LSGATMA1
Pd - Power Dissipation:50 W
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Part Number:SCT3040KW7TL
Pd - Power Dissipation:267 W
Channel Mode:Enhancement
Part Number:SCT4018KEC11
Technology:SiC
Mounting Style:Through Hole
Part Number:SCTWA35N65G2V
FET Type:N-Channel
Power Dissipation:208W (Tc)
Part Number:SCTWA60N120G2-4
Drain-Source Breakdown Voltage:1.2 kV
Continuous Drain Current:60 A