Minimum Order Quantity:10
Price:Contact for Sample
Packaging Details:Standard package
Minimum Order Quantity:10
Price:Contact for Sample
Packaging Details:Standard package
Minimum Order Quantity:10
Price:Contact for Sample
Packaging Details:Standard package
Minimum Order Quantity:10
Price:Contact for Sample
Packaging Details:Standard package
Minimum Order Quantity:10
Price:Contact for Sample
Packaging Details:Standard package
Part Number:IKW50N65WR5
Unit Weight:6.047 g
Gate-Emitter Leakage Current:100 nA
Part Number:IXTP160N10T
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Part Number:BSC026N08NS5
Technology:Si
Transistor Polarity:N-Channel
Part Number:IPB100N04S4-H2
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:40 V
Part Number:IPDD60R050G7
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:600 V
Part Number:IPB042N10N3G
Series:OptiMOS™
FET Type:N-Channel
Part Number:IPP051N15N5
Height:15.65 mm
Length:10 mm