Part Number:IKW50N65ET7XKSA1
Power - Max:273 W
Reverse Recovery Time:93 ns
Part Number:IKW30N65ET7XKSA1
VCE:650 V
Storage temperature:-55 - 150 °C
Part Number:IKW40N120CS7XKSA1
Maximum Gate Emitter Voltage:- 20 V, 20 V
Continuous Collector Current at 25 C:82 A
Part Number:IKW20N65ET7XKSA1
Td (on/off) @ 25°C:16ns/210ns
Test Condition:400V, 20A, 12Ohm, 15V
Part Number:IKW40N120CH7XKSA1
IFpuls max:165A
Ptot (@ TA=25°C) max:330 W
Part Number:IKY50N120CH7XKSA1
Voltage - Collector Emitter Breakdown:1200 V
Input Type:Standard
Part Number:IKQ75N120CS7XKSA1
Maximum Gate Emitter Voltage:- 20 V, 20 V
Package:TO-247-3
Part Number:IMBF170R450M1
Product Status:Active
FET Type:N-Channel
Part Number:IMBG65R048M1H
Peak drain current(Max):99A
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 18 V
Part Number:IMBG65R039M1H
Current - Continuous Drain (Id) @ 25°C:54A (Tc)
Rds On (Max) @ Id, Vgs:51mOhm @ 25A, 18V
Part Number:IMW65R030M1H
Driving voltage:18V
Channel Mode:Enhancement
Part Number:IMZ120R350M1H
Benchmark gate threshold voltage:VGS(th) = 4.5V
Tvj,max:175°C