Part Number:SCT3022KLGC11
Rds On (Max) @ Id, Vgs:28.6mOhm @ 36A, 18V
Vgs (Max):+22V, -4V
Part Number:SCT4045DW7HRTL
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Part Number:SCTW35N65G2V
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Part Number:SCTWA90N65G2V-4
Rds On (Max) @ Id, Vgs:24mOhm @ 50A, 18V
Input Capacitance (Ciss) (Max) @ Vds:3380 pF @ 400 V
Part Number:SCTWA90N65G2V
Gate Charge (Qg) (Max) @ Vgs:157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds:3380 pF @ 400 V
Part Number:SCTH90N65G2V-7
FET Type:N-Channel
Id - Continuous Drain Current:90 A
Part Number:SCT4026DW7HRTL
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:750 V
Part Number:NVBG020N090SC1
Typical Turn-On Delay Time:39 ns
Transistor Type:1 N-Channel
Part Number:TW070J120B,S1Q
High voltage:VDSS = 1200 V
Gate-source voltage:+25V/-10V
Part Number:TW015N120C,S1F
Drive Voltage (Max Rds On, Min Rds On):18V
Gate Charge (Qg) (Max) @ Vgs:158 nC @ 18 V
Part Number:TW107N65C,S1F
Qg - Gate Charge:28 nC
Vgs - Gate-Source Voltage:- 10 V, + 25 V
Part Number:TW027N65C,S1F
Product Category:MOSFET
Number of Channels:1 Channel