Part Number:NTH4L020N090SC1
Technology:SiCFET (Silicon Carbide)
FET Type:N-Channel
Part Number:NVBLS001N06C
Id - Continuous Drain Current:422 A
Maximum Operating Temperature:+ 175 C
Part Number:NTHL080N120SC1A
Rds On:110mOhm
Vgs:4.3V
Part Number:NVH4L022N120M3S
Current - Continuous Drain (Id) @ 25°C:68A (Tc)
Drive Voltage:18V
Part Number:NTBLS1D1N08H
Rds On (Max) @ Id, Vgs:1.05mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds:11200 pF @ 40 V
Part Number:NTBG080N120SC1
Drain−to−Source Voltage:1200 V
Gate−to−Source Voltage:−15/+25 V
Part Number:NTTFD4D0N04HLTWG
Technology:MOSFET (Metal Oxide)
Configuration:2 N-Channel (Dual)
Part Number:NTHL040N120SC1
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Part Number:NVMTS0D7N04CTXG
Product Category:MOSFET
Rds On (Max) @ Id, Vgs:0.67mOhm @ 50A, 10V
Part Number:NVHL060N090SC1
Zero Gate Voltage Drain Current:100 uA
Gate−to−Source Leakage Current:±1 uA
Part Number:NTP055N65S3H
Typical Turn-On Delay Time:30 ns
Series:SuperFET® III
Part Number:NTMFS0D9N03CGT1G
Pulsed Drain Current:900 A
Junction−to−Case – Steady State:1.0 °C/W