Part Number:IPT004N03LATMA1
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Part Number:BSC050N10NS5ATMA1
Power Dissipation:3W (Ta), 136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Part Number:NVHL040N120SC1
Vgs th - Gate-Source Threshold Voltage:4.3 V
Pd - Power Dissipation:348 W
Part Number:IPP60R065S7XKSA1
FET Type:N-Channel
Product Status:Active
Part Number:IPDQ60R040S7XTMA1
Technology:Si
Channels:1
Part Number:IPDQ60R022S7XTMA1
Vgs(th) (Max) @ Id:4.5V @ 1.44mA
Operating Temperature:-55°C ~ 150°C (TJ)
Part Number:NTH4L020N090SC1
Technology:SiCFET (Silicon Carbide)
FET Type:N-Channel
Part Number:NVBLS001N06C
Id - Continuous Drain Current:422 A
Maximum Operating Temperature:+ 175 C
Part Number:NTHL080N120SC1A
Rds On:110mOhm
Vgs:4.3V
Part Number:NVH4L022N120M3S
Current - Continuous Drain (Id) @ 25°C:68A (Tc)
Drive Voltage:18V
Part Number:NTBLS1D1N08H
Rds On (Max) @ Id, Vgs:1.05mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds:11200 pF @ 40 V
Part Number:NTBG080N120SC1
Drain−to−Source Voltage:1200 V
Gate−to−Source Voltage:−15/+25 V