Part Number:IXBT14N300HV
Pd - Power Dissipation:200 W
Technology:Si
Part Number:IXYP60N65A5
Series:XPT™, GenX5™
Vce(on) (Max) @ Vge, Ic:1.35V @ 15V, 36A
Part Number:RGT40TS65DGC13
Pd - Power Dissipation:144 W
Diode Forward Current(TC = 25°C):35A
Part Number:IXYX40N250CHV
Current - Collector Pulsed (Icm):380 A
Switching Energy:11.7mJ (on), 6.9mJ (off)
Part Number:IXYA30N120A4HV
Configuration:Single
Pd - Power Dissipation:500 W
Part Number:IXYX50N170C
Current - Collector (Ic) (Max):178 A
Current - Collector Pulsed (Icm):460 A
Part Number:IXBK64N250
Package / Case:TO-264-3
Configuration:Single
Part Number:IXBX50N360HV
Reverse Recovery Time (trr):1.7 µs
Operating Temperature:-55°C ~ 150°C (TJ)
Part Number:IXBH32N300
Voltage - Collector Emitter Breakdown (Max):3000 V
Current - Collector (Ic) (Max):80 A
Part Number:STGWA20H65DFB2
Collector- Emitter Voltage VCEO(Max):650V
Reverse Recovery Time (trr):215 ns
Part Number:STGWA60V60DWFAG
Input Type:Standard
Gate Charge:314 nC
Part Number:STG200M65F2D8AG
Maximum junction temperature:TJ = 175 °C
Gate-emitter voltage:±20V