Part Number:S80KS2562GABHA023
Technology:25-nm DRAM
Operating temperature range - Industrial Plus (V):–40 °C to +105 °C
Part Number:S70KS1282GABHV020
Supply Current - Max:60 mA
Access Time:35 ns
Part Number:S70KL1283GABHV020
Lead Ball Finish:N/A
Interfaces:xSPI (Octal)
Part Number:S27KS0642GABHB020
Memory Organization:8M x 8
Interface Bandwidth:400 MByte/s
Part Number:S27KS0643GABHA023
Peak Reflow Temp:260 °C
Memory Interface:SPI - Octal I/O
Part Number:S70KL1282GABHB020
Write Cycle Time - Word, Page:35ns
Interface support:1.8 V / 3.0 V
Part Number:S27KL0642GABHI030
Technology:PSRAM (Pseudo SRAM)
Memory Type:Volatile
Part Number:S80KS2563GABHM023
Product Category:DRAM
Technology:PSRAM (Pseudo SRAM)
Part Number:CY7C1441KV33-133AXI
Access Time:6.5 ns
Voltage - Supply:3.135V ~ 3.6V
Part Number:S70KS1283GABHB020
Bus signals:11
Data bus:8-bit
Part Number:MT29F2G08ABAGAWP-ITE:G
Random read:25µs
Page program:300µs (TYP)
Part Number:MT29F2G01ABAGDWB-IT:G
Supply Current - Max:35 mA
Size:8mm x 6mm