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A2T21H410-24SR6 Integrated Circuit Chip 28V N-Channel Airfast RF Power LDMOS Transistor

Integrated Circuit Chip
April 03, 2025
Category Connection: Integrated Circuit Chip
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Tags:
#Integrated Circuit Chip 24-PQFN #TUSB1002ARGER Dual Channel Linear #Integrated Chips QFN24
Brief: Discover the A2T21H410-24SR6 Integrated Circuit Chip, a 28V N-Channel Airfast RF Power LDMOS Transistor designed for cellular base station applications. This high-performance transistor operates in the 2110 to 2170 MHz range, delivering 72W output power and 15.6dB gain. Ideal for digital predistortion error correction systems.
Related Product Features:
  • 72W asymmetrical Doherty RF power LDMOS transistor for cellular base stations.
  • Operates in the frequency range of 2110 to 2170 MHz.
  • Delivers high gain of 15.6 dB for superior performance.
  • Designed for digital predistortion error correction systems.
  • Features a greater negative gate-source voltage range for improved Class C operation.
  • Supports a continuous drain current of 1.6A to 2.7A.
  • Wide operating temperature range from -40°C to +150°C.
  • Compact and lightweight with a unit weight of 8.604 grams.
Faqs:
  • What is the operating frequency range of the A2T21H410-24SR6 transistor?
    The A2T21H410-24SR6 operates in the frequency range of 2110 to 2170 MHz, making it ideal for cellular base station applications.
  • What is the output power of the A2T21H410-24SR6 transistor?
    This transistor delivers an impressive output power of 72W, ensuring robust performance in demanding applications.
  • What is the gain of the A2T21H410-24SR6 transistor?
    The A2T21H410-24SR6 offers a high gain of 15.6 dB, enhancing signal strength and quality in RF power applications.
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