A Reliable Choice for High-Efficiency Switching Power Supplies and Power Conversion
In modern switching mode power supplies (SMPS), power factor correction (PFC), and DC-DC converters, a high-performance gate driver serves as the critical link between the control chip and power switching devices (such as MOSFETs and GaN). The 1EDN8511B from Infineon’s EiceDRIVER™ series is designed precisely for this purpose—this single-channel low-side gate driver IC, housed in a compact SOT-23-6 package, delivers an impressive 4 A source current and 8 A sink current drive capability, and is optimized for driving OptiMOS™, CoolMOS™, and gallium nitride (GaN HEMT) power switching devices.
Shenzhen Mingjiada Electronics has long supplied and recycled the 1EDN8511B gate driver, providing reliable product support for your power supply design solutions.
1EDN8511B Product Overview
The 1EDN8511B is part of Infineon’s EiceDRIVER™ 1EDN series and is a non-isolated, single-channel low-side gate driver. Its pinout complies with industry standards, facilitating the replacement and upgrade of existing designs. Whether in industrial-grade SMPS, electric vehicle on-board or off-board chargers, or solar micro-inverters, the 1EDN8511B can significantly improve system efficiency and power density.
1EDN8511B Key Technical Specifications
Drive Configuration: Single-channel low-side
Output Current: Source current 4A / Sink current 8A
Operating Voltage Range: 4.5V – 20V
Propagation Delay: 19 ns (typical)
Rise/Fall Time: 6.5 ns / 4.5 ns
Undervoltage Lockout (UVLO): 8 V (on) / 7 V (off)
Operating Temperature Range: -40°C to +150°C
Package: SOT-23-6
Input Type: Selectable in-phase/inverting
1EDN8511B Key Features and Advantages
1. Exceptional drive capability supporting fast switching
The output stage, featuring a 4A source current and 8A sink current, combined with rise times of just 6.5ns and fall times of 4.5ns, enables rapid charging and discharging of the gate capacitance of power switches, effectively reducing switching losses. This makes it particularly suitable for high-frequency applications.
2. Extremely Low Propagation Delay and High Precision
A typical propagation delay of just 19 ns, with delay accuracy controlled within +6/-4 ns, ensures precise timing control in multi-rail power supply or synchronous rectification applications.
3. Robust and Durable
-10 V input voltage immunity: Provides a critical safety margin when driving pulse transformers.
5 A reverse current robustness: When driving MOSFETs in TO-220/TO-247 packages, external Schottky clamping diodes are eliminated, simplifying the design and reducing costs.
4. Independent Source/Sink Current Outputs
The separate OUT_SRC and OUT_SNK pin design allows users to independently adjust turn-on and turn-off speeds via external resistors, providing flexible optimization of the balance between EMI and switching losses.
5. Comprehensive Undervoltage Lockout (UVLO) Protection
The 1EDN8511B features a UVLO turn-on threshold of 8 V and a turn-off threshold of 7 V. It is specifically designed to drive standard-level MOSFETs and CoolMOS™ super-junction MOSFETs, ensuring that the power devices remain in a safe and controlled state during startup and under abnormal conditions.
1EDN8511B Key Applications
Switch-Mode Power Supplies (SMPS): Suitable for industrial-grade AC-DC power supplies, PC power supplies, and server power supplies.
Power Factor Correction (PFC): Improves PFC stage efficiency to meet high power factor requirements.
DC-DC Converters: Used in communication module power supplies, automotive DC-DC converters, and non-automotive chargers.
Low-Voltage Drives and Power Tools: Drives low-voltage motors to improve operating efficiency.
Solar Systems: Solar micro-inverters and power optimizer modules.
Wireless Charging Systems: Core driver components for high-frequency inverter circuits.
About Shenzhen Mingjiada Electronics
As a professional electronic component supplier, Shenzhen Mingjiada Electronics has long supplied genuine 1EDN8511B gate drivers and also offers recycling services for this model. We are committed to providing power supply engineers with high-quality, highly reliable component solutions. Please feel free to contact us for inquiries and orders.
Conclusion
With its 4A/8A peak current, low propagation delay of 19 ns, wide operating voltage range, and robust immunity to interference, the 1EDN8511B is an ideal single-channel low-side gate driver for high-frequency, high-efficiency power conversion designs. Whether improving existing SMPS designs or developing next-generation GaN power systems, the 1EDN8511B delivers exceptional performance.
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