Introduction: The Explosive Growth in AI Computing Power Drives a Transformation in Server Power Supply Architectures
With the large-scale deployment of large language models, generative AI and GPU clusters, the demand for computing power in AI data centres is growing exponentially, and server power supply systems are undergoing a comprehensive upgrade from traditional 12V architectures to 48V bus architectures. Against this backdrop, the selection of power devices has become a key factor in determining system efficiency, power density and reliability. As the core switching devices in server power supply units (PSUs), 48V intermediate bus converters (IBCs) and on-board voltage regulation modules (VRMs), the performance of power MOSFETs directly impacts the overall energy efficiency of the system.
Shenzhen Mingjiada Electronics Co., Ltd. (www.integrated-ic.com), established in 1996, is a globally renowned authorised independent distributor of electronic components with nearly three decades of industry experience. Headquartered in Shenzhen, the company has established branches in Hong Kong, Japan, Russia and Taiwan, and is certified to ISO 9001:2014 and ISO 14001:2014. Mingjiada maintains a long-term stock of power MOSFET products from world-leading brands such as Infineon, Navitas, ST, ON Semiconductor, ROHM, Renesas, Wolfspeed and Microchip, providing one-stop power semiconductor solutions for AI data centre and server power supply applications.
I. Core Requirements for Power MOSFETs in AI Server Power Supplies
AI server power supplies typically comprise multiple power conversion stages, including the PFC (Power Factor Correction) stage, the LLC resonant converter stage, the 48V-12V IBC converter stage, and on-board VRMs. The performance requirements for power MOSFETs vary across these stages:
High-voltage AC-DC stages (PFC/LLC): Require CoolMOS™ super-junction MOSFETs or CoolSiC™/SiC MOSFETs with a breakdown voltage of 600V–650V or higher, with low switching losses and high conversion efficiency.
48V bus conversion (IBC): Requires medium-to-low voltage OptiMOS™ MOSFETs rated at 40V–100V, with ultra-low on-resistance (RDS(on)) and high-frequency switching capability.
On-board VRM power supply: Requires high-current, low-voltage MOSFETs to provide precise core power supply for AI accelerator chips such as GPUs and TPUs.
BBU (Battery Backup Unit): As supply voltages evolve towards ±400V and even 800V, SiC MOSFETs are increasingly being used in high-voltage BBUs.
II. Detailed Overview of Mingjiada’s Power MOSFET Product Range
1. Infineon – Full Range of Power MOSFETs
Mingjiada has long supplied Infineon’s full range of N-channel power MOSFETs, covering the following core products:
(1) OptiMOS™ Series — The benchmark for high efficiency in medium and low voltage applications
The OptiMOS™ series is the flagship range of Infineon’s medium and low voltage power MOSFETs, covering a voltage range from 12V to 250V and offering high switching efficiency and high power density. Mingjiada’s key offerings include:
OptiMOS™ 5: Full voltage coverage from 60V to 250V, including models such as the BSC052N08NS5 (80V/5.2mΩ) and ISC013N06NM5SC, specifically designed for synchronous rectification in AI servers and telecoms power supplies.
OptiMOS™ 6: Full voltage coverage from 60V to 200V, with on-resistance reduced by 30% compared to the previous generation and a significant improvement in quality factor. The 100V series features an 18% reduction in on-resistance and a maximum improvement of 42% in key quality factors.
OptiMOS™ 7/8: Utilising advanced copper metallisation processes and 300mm wafer technology, RDS(on) is reduced by 25% for the 40V variants and by 40% for the 80V/100V variants.
(2) CoolMOS™ Series – High-Voltage Super-Junction MOSFETs
The CoolMOS™ series employs super-junction MOSFET technology and is suitable for high-efficiency switching power supplies. Mingjiada supplies the full product range, including C3, C7 and G7 series, such as the IPT60R050G7 (600V CoolMOS™ G7), which is widely used in PFC, server power supplies and industrial SMPS. Mami Electric has incorporated Infineon’s CoolMOS™ 8 devices into its 5.5kW AI server power supply, achieving high efficiency, high power density and high reliability.
(3) CoolSiC™ Series – Silicon Carbide MOSFETs
CoolSiC™ MOSFETs utilise silicon carbide technology, supporting voltage ratings of up to 1200V/1700V, with the ability to operate at a junction temperature of 175°C and ultra-low on-resistance losses. Mingjiada supplies the full range of CoolSiC™ products, which offer significant advantages in the PFC stage and high-voltage DC-DC conversion stages of AI server power supplies.
(4) CoolGaN™ Series – Gallium Nitride Transistors
The CoolGaN™ series is based on gallium nitride (GaN) technology and features zero reverse recovery charge and ultra-high switching frequencies. In AI server and data centre power supplies, CoolGaN™ devices support high-efficiency power delivery across the entire chain from the mains to the chip, meeting the high power density requirements of AI computing infrastructure.
(5) StrongIRFET™ Series – Cost-Effective General-Purpose Devices
The StrongIRFET™ series is positioned as a cost-effective range of medium- and low-voltage MOSFETs, offering exceptional durability and avalanche protection. The StrongIRFET™ 2 series features a maximum VBRDSS of 100 V, a minimum RDS(on) of just 1.2 mΩ, and an operating temperature range spanning -55 °C to 175 °C.
2. Navitas — GeneSiC Series SiC MOSFETs
Mingjiada has long supplied Navitas’ GeneSiC series of silicon carbide MOSFETs, which utilise a unique ‘trench-assisted planar gate’ technology. These are primarily divided into two series:
Gen-3 Fast (G3F) Series: Designed specifically for applications requiring the fastest switching speeds and highest efficiency, targeting high-frequency, high-power-density scenarios such as AI data centre server power supplies, electric vehicle on-board chargers (OBCs) and fast DC charging stations. Voltage ratings include 650V and 1200V, with packaging options such as D2PAK-7L, TOLL and TO-247-4.
Gen-3 Rugged (G3R) series: Focusing on extreme ruggedness and high reliability, it features higher avalanche withstand voltage and stronger short-circuit capability, with voltage ratings covering 1,200 V and 1,700 V.
3. STMicroelectronics — Power MOSFETs and SiC MOSFETs
Mingjiada stocks the full range of ST power MOSFETs and silicon carbide (SiC) MOSFETs. ST’s power MOSFETs cover a breakdown voltage range from –100 V to 1,700 V, including the high-voltage MDmesh/STMESH trench series and the low-voltage STripFET series. ST’s SiC MOSFETs offer an extended voltage range from 650 V to 2,200 V, with outstanding switching performance and extremely low on-resistance per unit area. Typical applications include server and telecoms power supplies, micro-inverters and fast charging.
4. Other Core Brands
Mingjiada also supplies power MOSFET products from the following brands:
Onsemi: EliteSiC silicon carbide MOSFETs, specifically designed for electric vehicle traction inverters and high-voltage power conversion.
ROHM: N-channel power MOSFETs, automotive-grade MOSFETs and SiC MOSFETs. ROHM’s 750V SiC MOSFET “SCT4013DLL” has been adopted in the BBU of AI server power supplies.
Renesas: Automotive and industrial-grade power MOSFETs.
Wolfspeed: SiC MOSFETs and SiC power modules covering the full voltage range from 650V to 1700V.
Microchip: Silicon carbide MOSFETs across all voltage ratings; the 650V series is suitable for medium- to high-voltage applications such as server power supplies.
Toshiba: High-reliability MOSFETs.
III. Mingjiada’s Service Advantages
Extensive stock availability: With dual warehousing centres in Shenzhen and Hong Kong, we maintain a stock of over 2 million popular models, supporting “same-day ordering, next-day dispatch”.
Quality Assurance: All products are 100% genuine and certified to ISO 9001 and ISO 14001 standards, with end-to-end testing to ensure reliable quality.
Flexible Procurement: We support everything from small-batch samples (starting from a single unit) to large-volume production orders, meeting customer needs at every stage.
Rapid Delivery: Standard orders are delivered within 1–3 days; urgent orders are dispatched within 4 hours and delivered within 24–48 hours.
Conclusion
Against the backdrop of rapid development in AI computing infrastructure, efficient and reliable power MOSFETs are essential for achieving high power density and energy efficiency in server power supply systems. With a comprehensive range of power MOSFET products covering world-leading brands such as Infineon, Navitas, ST, ON Semiconductor, ROHM and Wolfspeed, coupled with extensive stock availability and rapid delivery capabilities, Mingjiada Electronics is committed to providing one-stop power semiconductor procurement solutions for AI data centres and server power supply applications.
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