company blog about Acquisition Renesas FET Drivers Evaluation Board:FET Driver,GaN FET Driver,Synchronous Buck FET Driver

Acquisition Renesas FET Drivers Evaluation Board:FET Driver,GaN FET Driver,Synchronous Buck FET Driver

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I. FET Driver Evaluation Boards: The High-Reliability Industrial Foundation

Universal FET driver evaluation boards focus on delivering stable, robust gate drive capability, suitable for diverse applications including motor drives and power conversion. Their core value lies in simplifying the design complexity of high-voltage, high-current switching circuits.

1. Core Models and Feature Analysis

Represented by the ISL78424EVAL3Z/ISL78444EVAL1Z series evaluation boards, these are specifically designed for evaluating 100V half-bridge drivers.

Robust Drive Capability: Delivers 3A source current and 4A sink current, enabling rapid MOSFET turn-on and turn-off to effectively reduce switching losses.

Integrated Design: Incorporates two on-board N-channel MOSFETs to form a complete half-bridge power stage, allowing direct load connection (e.g., DC motors) for testing.

Intelligent Control and Protection:

Tri-level PWM Input (ISL78424/ISL78444): Controls both high-side and low-side drivers simultaneously with a single signal, simplifying controller interfacing.

Programmable Dead Time: Adjustable via a single resistor (35ns to 400ns) to prevent direct conduction between high and low sides, ensuring system safety.

Wide Operating Range: Supply voltage from 8V to 18V, high-side driver withstands voltage swings up to 70V, and operating temperature from -40°C to +140°C, meeting demanding industrial and automotive requirements.

2. Typical Application Scenarios

Brushed/Brushless DC (BLDC) Motor Drive: Provides drive solutions for fans, pumps, and robotic joints.

Synchronous Switching Regulators: Used in power stage designs for DC-DC power supplies.

Industrial Power Supplies and Automation Equipment: Suitable for factory automation control systems due to its high reliability.

II. Gallium Nitride (GaN) FET Driver Evaluation Board: Pushing Efficiency and Density Boundaries

As demand surges for high power density and efficiency in AI, fast charging, and renewable energy systems, solutions based on wide bandgap semiconductor GaN are at the forefront. Renesas' GaN evaluation board addresses bottlenecks in high-power conversion.

1. Core Model and Feature Analysis

The RTKA226110DE0010BU evaluation board serves as a prime example, integrating the RAA226110 gate driver with a 650V GaN E-HEMT (Enhanced High Electron Mobility Transistor).

Future-proof GaN integration: On-board 650V GaN devices from GaN Systems reduce switching losses by up to 50% and triple power density compared to traditional silicon-based MOSFETs.

0V Shutdown Simplifies Design: Offers a 0V shutdown voltage solution eliminating complex negative voltage generation circuits, particularly suited for low-to-medium power applications to streamline design.

Ready-to-Use Half-Bridge Topology: The evaluation board incorporates all necessary circuitry including an isolated power supply and heat sink, forming an integrated half-bridge power driver board just 35mm high and compatible with 1U chassis designs.

Exceptional Device Performance: Paired with Renesas' fourth-generation SuperGaN® FETs (e.g., TP65H030G4P series), featuring a low on-resistance of 30mΩ and an optimised 4V threshold voltage, ensuring noise immunity while enhancing efficiency.

2. Typical Application Scenarios

AI Data Centre Power Supply: Employed in totem-pole PFC within 800V architectures, achieving peak efficiency exceeding 99.2% and power density reaching 120W/in³, thereby enhancing server energy efficiency.

EV Fast Charging Stations: Supports 22kW+ high-power charging. High switching frequencies (>500kHz) combined with low-loss characteristics significantly reduce transformer size and thermal management costs.

PV Storage & Communication Power Supplies: Suitable for high-efficiency solar microinverters and bidirectional DC-DC converters, enhancing overall energy cycle efficiency.

III. Synchronous Buck FET Driver Evaluation Board: Precise and Efficient Power Management

For applications requiring multi-channel, adjustable, and highly efficient buck conversion, the synchronous buck controller evaluation board provides a comprehensive power management verification platform.

1. Core Models and Feature Analysis

Taking the ISL78264EVAL1Z and ISL81601EVAL1Z evaluation boards as examples, they demonstrate different performance emphases.

Their key characteristics are summarised in the table below:

ISL78264EVAL1Z Evaluation Board

Core Controller ISL78264 Dual Synchronous Buck Controller

Input Voltage Range 3.75V to 42.0V

Output Capability Channel 1: 3.3V/5V fixed or 0.8-5V adjustable; Channel 2: 0.8-32V adjustable

Switching Frequency 200kHz to 2MHz programmable

Core Advantages Dual independent outputs, exceptional flexibility, ultra-low quiescent current (6μA per channel)

Typical Applications Automotive ECUs, infotainment systems, industrial control

ISL81601EVAL1Z Evaluation Board

Core Controller ISL81601 60V high-voltage synchronous buck controller

Input Voltage Range 9V to 60V

Output Capability Supports bidirectional operation; output current capability depends on external FET and inductor

Switching Frequency Programmable from 100kHz to 600kHz

Core Advantages High input voltage, bidirectional operation, integrated robust protection features

Typical Applications High-current applications, battery-powered systems, communication equipment power supplies

2. Design Advantages

These evaluation boards collectively deliver exceptional flexibility and reliability:

High-efficiency modes: Supports forced PWM and light-load power-saving modes (e.g., DEM, pulse skipping) to optimise efficiency across the full load range.

Comprehensive protection features: Integrated overvoltage (OVP), undervoltage (UVP), overcurrent (OCP), and overtemperature (OTP) protection ensure stable system operation.