company blog about Acquisition Transistor IGBT FGA40N65SMD 650V Single IGBT Field Stop Transistors TO-3PN

Acquisition Transistor IGBT FGA40N65SMD 650V Single IGBT Field Stop Transistors TO-3PN

Product Description Of FGA40N65SMD

FGA40N65SMD is Transistor IGBT - 650V Single IGBT Field Stop Transistors, package is TO-3PN, Through Hole. Tighten Parameter Distribution, Operating Temperature is -55°C ~ 175°C (TJ).

Specification Of FGA40N65SMD

Features Of FGA40N65SMD

• Power - Max: 349 W
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 120 A
• Switching Energy: 820µJ (on), 260µJ (off)
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
• Voltage - Collector Emitter Breakdown (Max): 650 V

Package Photo Of FGA40N65SMD

Specific Recycle Process

1. You can simply classify your IC/module stocks and identify the model, brand, production date, quantity, etc.

2. Please send your inventory list to our evaluation team by fax or e-mail.

3. When you receive the purchase offer from one of our professionals, we can negotiate the specific transaction method and delivery and reach an agreement.

4. We only recycle from regular channels, such as agents, traders, and factories, and do not accept irregular sources.