Acquisitions SIC Integrated Circuit Chip SCT040W120G3AG HiP247 Wide Bandgap Transistors Acquisitions Transistors
Product Description Of SCT040W120G3AG
SCT040W120G3AG is Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package. Improve application performance in frequency, energy efficiency, system size and weight reduction.
Specification Of SCT040W120G3AG
| Part Number: |
SCT040W120G3AG |
Power Dissipation (Max): |
312W |
| Vgs(Th) (Max) @ Id: |
4.2V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs: |
56 NC @ 18 V |
| Drain Current (Pulsed): |
179 A |
Input Capacitance (Ciss) (Max) @ Vds: |
1329 PF @ 800 V |
Features Of SCT040W120G3AG
- AEC-Q101 qualified
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Very fast and robust intrinsic body diode
- Very high operating junction temperature capability (TJ = 200 °C)
Specific Recycle Process
1. You can simply classify your IC/module stocks and identify the model, brand, production date, quantity, etc.
2. Please send your inventory list to our evaluation team by fax or e-mail.
3. When you receive the purchase offer from one of our professionals, we can negotiate the specific transaction method and delivery and reach an agreement.
4. We only recycle from regular channels, such as agents, traders, and factories, and do not accept irregular sources.
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