Shenzhen Mingjiada Electronics Co., Ltd. has been supplying UJ3C065080B3: EliteSiC™ 650V/25A silicon carbide (SiC) cascaded JFET power device (D2PAK-3 package) for a long time. We offer genuine original products, with ample stock available. Please contact us immediately for more information!
UJ3C065080B3 Product Overview
UJ3C065080B3 is a 650V/25A silicon carbide (SiC) cascaded JFET power device launched by UnitedSiC, packaged in a D2PAK-3 (TO-263-3) package, suitable for high-frequency switching, high-efficiency power conversion, and automotive electronics applications. The UJ3C065080B3 combines the superior performance of SiC material, offering low on-resistance, high-speed switching, and high-temperature stability, making it an ideal alternative to traditional silicon-based MOSFETs and IGBTs.
UJ3C065080B3 Key Features
High-voltage, high-current capability
650V drain-source breakdown voltage (Vds), 25A continuous drain current (Id), with pulse current up to 65A, suitable for high-power applications.
Ultra-low on-resistance (Rds(on))
80mΩ (typical), reducing conduction losses and improving system efficiency.
High-speed switching performance
13ns rise time, 11ns fall time, reducing switching losses, suitable for high-frequency applications.
Wide temperature range operation
-55°C to +175°C operating temperature range, suitable for harsh environments.
Enhanced SiC FET structure
Features a cascaded JFET design, compatible with standard MOSFET drivers, no negative voltage shutdown required.
Compliant with AEC-Q101 automotive certification
Suitable for automotive electronic systems such as electric vehicle (EV) on-board chargers (OBC) and DC-DC converters.
UJ3C065080B3 Main Applications
Electric vehicle (EV) drive systems
UJ3C065080B3 can be used in 800V high-voltage platform inverters to improve energy efficiency and reduce heat dissipation requirements.
Industrial power supplies & photovoltaic inverters
Suitable for high-frequency switching power supplies and solar inverters to reduce energy loss.
Server & data centre power supplies
The high efficiency of UJ3C065080B3 optimises 48V DC-DC converters, increasing power density.
Wireless Charging & Fast Charging Devices
Utilising SiC's high-frequency advantages to improve charging efficiency and reduce magnetic component size.
Motor Drives & Industrial Automation
UJ3C065080B3 is suitable for servo drives and inverters, enhancing system reliability.
UJ3C065080B3 Detailed Specifications
Model: UJ3C065080B3
Brand: UnitedSiC
Package: D2PAK-3 (TO-263-3)
Technology: SiC (Silicon Carbide)
Drain-Source Voltage (Vds): 650 V
Continuous Drain Current (Id): 25 A
Pulse Drain Current (Idm): 65 A
On-Resistance (Rds(on)): 80 (typical) mΩ
Gate Charge (Qg): 51 nC
Gate-Source Voltage (Vgs): ±25 V
Threshold Voltage (Vgs(th)): 4 V
Switching Time (tr/tf): 13/11 ns
Operating temperature range: -55 to +175 °C
Power dissipation (Pd): 115 W
UJ3C065080B3 Supply Chain and Inventory
Mingjiada Electronics offers stock availability for UJ3C065080B3, with ample inventory and support for rapid delivery.
We provide genuine original manufacturer products and support AEC-Q101 certification verification.
Samples are available for applications in new energy, automotive electronics, industrial power supplies, and other fields.
Summary
As part of the UnitedSiC EliteSiC™ series, the UJ3C065080B3 is a 650V/25A SiC power device. offers low conduction losses, high-speed switching, and high-temperature stability, making it an ideal choice for applications such as electric vehicles, photovoltaic inverters, and industrial power supplies. The D2PAK-3 packaging of UJ3C065080B3 facilitates PCB design, while AEC-Q101 certification ensures its reliability in automotive electronics.
For pricing or more product information, please contact Mr. Chen:
Phone: +86 13410018555
Email: sales@hkmjd.com
Website: www.integrated-ic.com
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