company blog about CoolGaN™ 600V Power Transistor IGT60R190D1SATMA1 Offers Extreme Efficiency and Reliability

Shenzhen Mingjiada Electronics Co., Ltd. supplies and recycles CoolGan™ 600V power transistors IGT60R190D1SATMA1 with high efficiency and reliability

Introduction

Infineon Technologies CoolGan™ 600V Enhanced Mode (e-Mode) power transistors enable simpler half-bridge topologies with fast turn-on and turn-off speeds. The transistors offer high efficiency, high power density, higher operating frequency capability and lower EMI. applications include telecom/datacom/server SMPS, wireless charging, chargers and adapters.

Technical Data

Series: CoolGaN™

FET Type: N-Channel

Technology: GaNFET (Gallium Nitride)

Drain-Source Voltage (Vdss): 600 V

Current at 25°C - Continuous Drain (Id): 12.5A (Tc)

Vgs(th) at different Id (max.): 1,6V @ 960µA

Vgs(th) (max): 1,6V @ 960µA at different Id's

Input capacitance (Ciss) (max) at different Vds: 157 pF @ 400 V

Power Dissipation (Max): 55,5W (Tc)

Operating Temperature: -55°C ~ 150°C (TJ)

Mounting Type: Surface Mount

Supplier Device Package: PG-HSOF-8-3

Package/Housing: 8-PowerSFN

Base Product Number: IGT60R190

Features

• Enhancement mode transistor, normally closed switch
• Ultra-fast switching speed
• No reverse recovery charge
• Capable of reverse conduction
• Low gate charge, low output charge
• Excellent commutation tolerance
• Improved system efficiency
• Increased power density
• Supports higher operating frequencies
• Lower system cost
• Reduced EMI
• Comply with JEDEC standards (JESD47 and JESD22), suitable for industrial applications.

The company only recycles regular channel sources, such as agents, traders, terminal factories, etc., and does not accept sources that are not regular channels.

Company home page: www.hkmjd.com