company blog about IGBT Transistors FGA40N65SMD and FGA40T65SHD Field Cutoff IGBT 650 V, 40 A

Shenzhen Mingjiada Electronics Co., Ltd. original supply IGBT transistor FGA40N65SMD and FGA40T65SHD field cut-off IGBT 650 V, 40 A

Device Model: FGA40N65SMD, FGA40T65SHD

Category: IGBT Transistors

Manufacturer: onsemi

Package: Tube

Part Status: On Sale

IGBT Type: Field Cutoff

Voltage - Collector Breakdown (Max): 650 V

Current - Collector (Ic) (Max): 80 A

Current - Collector Pulse (Icm): 120 A

Vce(on) at varying Vge, Ic (max): 2.5V @ 15V, 40A

Power - Max: 349 W

Switching Energy: 820µJ (On), 260µJ (Off)

Input Type: Standard

Gate Charge: 119 nC

Td (On/Off) at 25°C: Value 12ns/92ns

Test Conditions: 400V, 40A, 6 Ohms, 15V

Reverse Recovery Time (trr): 42 ns

Operating Temperature: -55°C ~ 175°C (TJ)

Mounting Type: Through Hole

Package/Housing: TO-3P-3, SC-65-3

Supplier Device Package: TO-3PN

Overview

ON Semiconductor's new field cutoff Gen 2 IGBTs feature a new field cutoff IGBT technology for applications where low conduction and switching losses are critical, such as solar inverters, UPS, welders, inductive heating, telecom, ESS and PFC.

Features

Maximum junction temperature TJ =175 °C

Positive temperature coefficient for easy parallel operation

High current capability

Low saturation voltage: VCE(sat) = 1.9 V (typical) @ IC = 40 A

Fast switching: EOFF = 6.5uJ/A

Tight parameter distribution

RoHS compliant

Applications

Power generation and distribution

Uninterruptible Power Supplies

Other industrial