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company blog about In-stock Supply Of Infineon N-channel Power MOSFET BSZ440N10NS3G OptiMOS™3 Power Transistor, 100V

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Company BLOG
In-stock Supply Of Infineon N-channel Power MOSFET BSZ440N10NS3G OptiMOS™3 Power Transistor, 100V
Latest company news about In-stock Supply Of Infineon N-channel Power MOSFET BSZ440N10NS3G OptiMOS™3 Power Transistor, 100V

Mingjiada Electronics Hot Sale: Infineon N-channel Power MOSFET BSZ440N10NS3G, OptiMOS™3 Power Transistor, 100 V.

 

BSZ440N10NS3G Product Description
The Infineon BSZ440N10NS3G N-channel power MOSFET is a 100 V rated OptiMOS™3 series power transistor. The BSZ440N10NS3G is packaged in a PG-TSDSON-8 package, featuring a compact size (3.3 × 3.3 × 1.1 mm), making it ideal for high-density circuit designs. The BSZ440N10NS3G complies with RoHS and AEC-Q101 standards, making it suitable for industrial and automotive electronics applications.

 

BSZ440N10NS3G Product Features
Low on-resistance: RDS(on) as low as 3.8 milliohms (typical), the BSZ440N10NS3G significantly reduces power loss and improves system efficiency.
Fast switching capability: The BSZ440N10NS3G supports high-frequency operating scenarios, meeting the demands of modern efficient power conversion.
High surge current capability: The BSZ440N10NS3G can withstand larger current surges for short periods without damage.
Built-in reverse diode: The BSZ440N10NS3G reduces the need for additional components and simplifies circuit design.
RoHS compliant: Environmentally friendly and suitable for global market applications.
Package type: The BSZ440N10NS3G uses a PG-TSDSON-8 package, improving thermal and electrical performance while reducing installation space.

 

The BSZ440N10NS3G features the following outstanding features:
Ultra-low on-resistance: RDS(on) = 3.8 mΩ @ Vgs = 10 V
Fast switching capability: Qg = 9.1 nC @ 10 V
High current capability: Id = 18 A @ 25°C
Wide operating temperature range: -55°C to +150°C
Built-in reverse diode

 

Key Parameters
The main parameters of the
BSZ440N10NS3G include:
Drain-source voltage (VDS): 100 V
Continuous drain current (Id): 18A
Pulse drain current (Idp): 660A
Gate-source voltage (Vgs): ±20V
Threshold voltage (Vgs(th)): 2.7V
Input capacitance (Ciss): 640pF

 

Typical Applications
The BSZ440N10NS3G is widely used in:
Switching Power Supplies (SMPS)
DC-DC Converters
Motor Drives
Battery Management Systems
Industrial Power Supplies

 

Mingjiada Electronics guarantees the BSZ440N10NS3G is genuine and in stock. With its excellent performance parameters and reliability, the BSZ440N10NS3G is an ideal choice for power electronics design.

 

For inquiries regarding the purchase of BSZ440N10NS3G, please contact Mingjiada Electronics for the latest pricing and inventory information.

 

Contact Information:
Mr. Chen: +86 13410018555
Email: sales@hkmjd.com
Website:
www.integrated-ic.com
Address: Room 1239-1241, Xinyazhou Guoli Building, Zhenzhong Road, Futian District, Shenzhen City

Pub Time : 2025-07-12 10:00:31 >> News list
Contact Details
ShenZhen Mingjiada Electronics Co.,Ltd.

Contact Person: Mr. Sales Manager

Tel: 86-13410018555

Fax: 86-0755-83957753

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