company blog about INFINEON 2EDN8534F Dual Channel Low Side EiceDRIVER™ Gate Driver For MOSFETs And WBG Switches

INFINEON 2EDN8534F Dual Channel Low Side EiceDRIVER™ Gate Driver For MOSFETs And WBG Switches

In modern electronic device design, efficient and stable gate drivers are critical for power conversion systems. The Infineon 2EDN8534F dual-channel low-side EiceDRIVER™ gate driver is specifically optimised for driving MOSFETs and wide-bandgap power switching devices.

Shenzhen Mingjiada Electronics Co., Ltd., as a professional electronic component supplier, offers the 2EDN8534F dual-channel low-side EiceDRIVER™ gate driver solution. This driver significantly enhances system efficiency and reliability with up to ±5A source/sink current and a typical propagation delay of 19ns.

【2EDN8534F Product Positioning and Core Features】

The 2EDN8534F belongs to Infineon's EiceDRIVER™ 2EDN series, representing a significant addition to the existing 2EDN driver product line.

The 2EDN8534F is designed to meet the demands of modern power electronics systems for higher efficiency, exceptional power density, and sustained system robustness.

As a dual-channel low-side driver, the 2EDN8534F delivers peak sink and source currents up to 5A for capacitive loads, featuring rapid switching response with a typical rise time of 8.6ns and a fall time of just 6ns.

These characteristics make the 2EDN8534F highly suitable for driving high-speed power MOSFETs and switching elements based on wide bandgap materials.

Operating within a 4.5V to 20V supply range, the 2EDN8534F supports both 4V and 8V under-voltage lockout (UVLO) options, providing transient UVLO protection for power switches during abnormal conditions.

【Key Technical Parameters and Performance of the 2EDN8534F】

The 2EDN8534F employs a non-inverting configuration and CMOS logic type, with input threshold voltages VIL of 1.4V and VIH of 1.9V, ensuring compatibility with standard control circuits.

Its propagation delay is typically just 19ns, with a propagation delay accuracy of +6/-4 ns, representing outstanding performance for a dual-channel driver.

To enhance system reliability, the 2EDN8534F incorporates multiple protection features:

Active output voltage clamping typically achieves clamping within 20ns,

-12V input robustness and 5A reverse current robustness,

A rapid UVLO response mechanism, doubling the speed of response from start-up and high-load modes to UVLO functionality.

The 2EDN8534F utilises an 8-pin DSO package (PG-DSO-8) with SMD/SMT mounting, suitable for automated production. Its operating junction temperature range spans -40°C to +150°C, enabling operation in demanding environments.

【2EDN8534F Wide Bandgap Technology Compatibility】

As wide bandgap semiconductor technology becomes prevalent in power electronics, gate drivers require specialised characteristics to match. The 2EDN8534F is specifically optimised for driving SiC and GaN power switching devices.

Compared to traditional silicon-based devices, wide bandgap semiconductors offer higher operating frequencies, greater temperature tolerance, and lower switching losses.

However, these advantages impose greater demands on gate drivers: requiring faster switching speeds, lower propagation delays, and enhanced immunity to interference.

The 2EDN8534F's rail-to-rail output, ultra-low propagation delay (typically 19ns), and high immunity to interference make it exceptionally well-suited for driving WBG devices.

The 2EDN8534F's 5A peak current capability ensures rapid charging and discharging of WBG device input capacitance, minimising switching losses.

【2EDN8534F Application Domains and Design Value】

The 2EDN8534F is suitable for diverse power electronics applications, including:

Server and telecommunications equipment

DC-DC converters and industrial SMPS (switch-mode power supplies)

Power tools and low-speed light electric vehicles (LEVs)

Solar inverters and LED lighting

Electric vehicle charging stations and motor control

Within these applications, the 2EDN8534F enables engineers to achieve higher system efficiency and power density by reducing external component count and saving design space.

Its fast active output clamping function (typically achieved within 20ns) further enhances system robustness under abnormal operating conditions.

For applications demanding strict dual-gate drive timing, such as synchronous rectification, the matched internal propagation delay between channels offers significant advantages.

This enables parallel connection of both channels to effectively increase current drive capability, or the use of a single input signal to drive two parallel switches.

【Comparative Advantages of the 2EDN8534F Over Conventional Drivers】

Compared to standard gate drivers, the 2EDN8534F demonstrates distinct advantages in multiple aspects:

Regarding switching performance, the 2EDN8534F delivers a rise time of 8.6ns and a fall time of 6ns, outperforming many comparable products.

For system integration, the 2EDN8534F reduces complexity and cost by eliminating external components such as NPN/PNP transistors and external bootstrap diodes.

Regarding robustness, its -12V input immunity and 5A reverse current tolerance provide enhanced system protection.

Regarding power density, the 2EDN8534F employs a compact package design, supporting various space-constrained applications.

Furthermore, the 2EDN8534F's rapid UVLO response mechanism ensures the system can safely shut down before entering under-voltage lockout, significantly enhancing system immunity to interference and stability.