company blog about Infineon Automotive MOSFET IAUT165N08S5N029 OptiMOS™-5 Automotive MOSFET Transistors

Infineon Automotive MOSFET IAUT165N08S5N029 OptiMOS™-5 Automotive MOSFET Transistors

Product Description Of IAUT165N08S5N029
IAUT165N08S5N029 is 80V 2.9 mΩ OptiMOS™-5 Automotive N-Channel MOSFET Transistors.

Specification Of IAUT165N08S5N029
Transistor Polarity:N-Channel
Number of Channels:1 Channel
Vds - Drain-Source Breakdown Voltage:80 V
Id - Continuous Drain Current:165 A
Rds On - Drain-Source Resistance:2.9 mOhms
Vgs - Gate-Source Voltage:- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:2.2 V
Qg - Gate Charge:90 nC
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:167 W

Features Of IAUT165N08S5N029
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)
Ultra low Rds(on)
100% Avalanche tested

Applications Of IAUT165N08S5N029
48 V to 12 V DC-DC converter
High-voltage DC-DC converter for electric vehicles
HVAC control module
LED strips and signage