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Infineon BGA524N6-BOARD Silicon Germanium Low Noise Amplifier Evaluation Board For GNSS
Latest company news about Infineon BGA524N6-BOARD Silicon Germanium Low Noise Amplifier Evaluation Board For GNSS

Infineon BGA524N6-BOARD Silicon Germanium Low Noise Amplifier Evaluation Board For GNSS

 

Shenzhen Mingjiada Electronics Co., Ltd., a renowned distributor of electronic components, is pleased to formally introduce the BGA524N6-BOARD evaluation board based on the BGA524N6 chip. This evaluation board is specifically optimised for Global Navigation Satellite System (GNSS) applications, designed to assist engineers in efficiently verifying and integrating this high-performance silicon germanium (SiGe) low-noise amplifier.

 

BGA524N6-BOARD Evaluation Board Product Description:

The BGA524N6-BOARD is a front-end low-noise amplifier evaluation board for Global Navigation Satellite Systems (GNSS), operating within the 1550 MHz to 1615 MHz frequency range and supporting satellite systems including GPS, GLONASS, BeiDou, and Galileo. In specified application configurations, this low-noise amplifier (LNA) delivers 19.6 dB gain with a noise figure of 0.55 dB and current consumption of 2.5 mA. The BGA524N6-BOARD is based on Infineon Technologies' B7HF silicon-germanium technology, operating within a supply voltage range of 1.5 V to 3.3 V.

 

Core Features of the BGA524N6-BOARD:

The heart of the BGA524N6-BOARD evaluation board is its BGA524N6 silicon-germanium low-noise amplifier chip. Optimised for GNSS bands, this chip operates within the 1.55 GHz to 1.615 GHz frequency range, perfectly covering the core bands of major navigation systems including GPS L1, BeiDou B1, GLONASS L1, and Galileo E1.

 

The BGA524N6-BOARD evaluation board stands as an ideal choice for GNSS applications primarily due to the BGA524N6 chip's three outstanding performance characteristics:

Exceptional noise figure (0.55 dB) and high gain (19.6 dB): Noise figure is a critical metric measuring the amplifier's inherent noise contribution, where lower values indicate superior performance. A noise figure of 0.55 dB signifies that the signal-to-noise ratio degrades by merely 0.55 dB after amplification, representing near-peak levels among commercial GNSS LNAs. Concurrently, the high gain of 19.6 dB ensures that faint satellite signals (typically below -130 dBm) are effectively amplified, providing sufficiently robust signals for subsequent down-conversion and processing. This combination of parameters is crucial for enhancing receiver sensitivity in environments with severe signal obscuration (such as urban canyons) or high interference.

 

Extremely Low Power Consumption (2.5 mA @ 3.3 V): Operating within a voltage range of 1.5V to 3.3V, the chip consumes merely 2.5mA, resulting in typical power consumption of approximately 8.25mW. This low-power characteristic renders it particularly suitable for battery-powered portable devices such as smartwatches, trackers, and handheld terminals, significantly extending device runtime without compromising performance.

 

High Integration and Simplified Design: The BGA524N6 chip on the evaluation board utilises an ultra-compact TSNP-6-2 (DFN-6) leadless package measuring just 0.7mm x 1.1mm, substantially reducing PCB footprint. The chip incorporates integrated ESD protection (up to 2kV HBM) and features an internally matched 50Ω RF output. This enables engineers to achieve high performance with minimal external components (such as DC-blocking capacitors and bias inductors) when integrating it into systems, substantially simplifying RF front-end design complexity and reducing development time.

 

latest company news about Infineon BGA524N6-BOARD Silicon Germanium Low Noise Amplifier Evaluation Board For GNSS  0

 

Value and Typical Applications of the BGA524N6-BOARD Evaluation Board

The BGA524N6-BOARD delivers value by providing a validated, ready-to-use test platform. Engineers can rapidly evaluate the LNA's actual performance—including gain, noise figure, linearity (e.g., input 1dB compression point of -12dBm), and out-of-band suppression—without designing complex RF matching circuits or PCB layouts.

 

Owing to its outstanding performance, the BGA524N6-BOARD evaluation board and chip find extensive application in the following high-precision positioning domains:

 

Consumer-grade high-precision devices: Drones, autonomous agricultural vehicles, high-end handheld surveying instruments, etc., where positioning accuracy relies on stable reception of faint satellite signals.

Portable and wearable devices: Smartwatches, in-vehicle navigation systems, asset trackers, etc., which must ensure positioning reliability outdoors or during rapid movement while meeting low-power, long-endurance requirements.

Multi-mode GNSS receivers: Receiver modules supporting multi-system joint positioning (GPS, BeiDou, GLONASS, Galileo, etc.), requiring LNAs to deliver outstanding performance across unified frequency bands.

 

Advantages of Silicon-on-Germanium (SiGe) Technology

The SiGe process employed in the BGA524N6-BOARD is pivotal to its high performance. By introducing germanium atoms into silicon crystals, SiGe technology combines the low cost and high integration of silicon processes with the high-frequency, high-speed advantages typical of III-V compound semiconductors (such as GaAs). Compared to pure GaAs LNAs, SiGe LNAs typically offer superior temperature stability, higher reliability, and better compatibility with CMOS processes while achieving comparable noise and gain performance. This facilitates future integration of higher-density RF front-ends, such as combined LNA and mixer solutions.

 

Mingjiada Electronics maintains long-term supply of other Infineon evaluation board components, including but not limited to the following models:

DEMO-BGT24ATR22-YPA

DEMO-BGT24ATR22-DPA

DEMO-BGT60TR13C

DEMO-BGT60LTR11AIP

SHIELDXENSIVA

SHIELD-PASCO2-SENSOR

SHIELD-60ATR24ES-01

EVAL-MICROIAS

EVAL-CO2-5V-MINIBOARD

EVAL-PASCO2-MINIBOARD

TLV493D-A1B6-MS2GO

KIT-CSK-PASCO2

KIT-CSK-PASCO2-5V

CUR-SENSOR-PROGRAMMER

EVAL-PS-DP-MAIN-M5

Pub Time : 2025-12-10 13:40:39 >> News list
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