company blog about Infineon CYEL18V2563-200BKXE Low-Power High Bandwidth Pseudostatic RAM Memory

Shenzhen Mingjiada Electronics Co., Ltd. supplies and recycles the Infineon CYEL18V2563-200BKXE low-power, high-bandwidth pseudo-static RAM.

I. CYEL18V2563-200BKXE Product Overview

The CYEL18V2563-200BKXE is a 256 Mbit radiation-hardened pseudo-static random-access memory (pSRAM/HYPERRAM 2.0) developed by Infineon for the NewSpace commercial space sector and high-reliability, extreme operating conditions; it belongs to the KS-3 product family. The device utilises a high-density DRAM storage architecture internally whilst presenting a serial SRAM interface externally, combining the high-capacity advantages of DRAM with the simple control characteristics of SRAM; Equipped with an Octal xSPI (eight-line SPI) DDR high-speed interface and a 1.8 V low-voltage core, it achieves a triple combination of high bandwidth, low power consumption and strong radiation resistance within a miniature 24-ball FBGA package. It is specifically designed for low Earth orbit (LEO) satellite payloads, on-board data processing and high-reliability aerospace equipment, effectively optimising system size, weight, power consumption and total cost (SWaP-C).

II. CYEL18V2563-200BKXE Key Electrical Specifications

Storage Capacity: 256 Mbit

Communication Interface: Octal xSPI (octal SPI, x8) DDR interface

Clock Speed: 200 MHz DDR, peak bandwidth up to 1.6 Gbps

Operating Voltage: 1.8 V (1.7 V – 2.0 V)

Package Type: PG-BGA-24 (24-ball FBGA, 6 mm × 8 mm), lead-free Sn/Ag/Cu ball process, compliant with RoHS standards

Operating Temperature: Wide temperature range of -40 °C to +125 °C

Manufacturing Process: 25 nm DRAM process

Chip Select Configuration: Supports single chip select control, simplifying hardware routing

III. CYEL18V2563-200BKXE Radiation-Hardened Reliability Capabilities (Core Advantage in Aerospace)

Designed with radiation hardening to withstand cosmic rays and ionising radiation in space, meeting the requirements for long-term in-orbit operation of LEO constellation satellites:

Total Ionising Dose (TID): 100 krad (Si), outperforming Flash and FRAM memory devices on the same platform;

Single-Event Latch-Up (SEL): SEL resistance > 58 LET (at 125°C operating conditions), reducing the risk of abnormal chip latch-up in space environments;

Standardised batch control: Supports single-batch date code (SLDC), 100% coverage in final electrical testing, and provision of a Certificate of Conformity (CoC) and radiation batch acceptance report with the shipment;

Certification: Complies with AEC-Q100 automotive reliability certification and is backwards compatible with high-end military and extreme industrial applications.

IV. CYEL18V2563-200BKXE Low-Power Management Mechanisms

The chip incorporates multi-level intelligent power management modes, tailored for energy-constrained systems on-board satellites:

Hybrid Sleep Mode: Significantly reduces static power consumption whilst retaining optional local array self-refresh;

Deep Power-Down Mode: Enters an ultra-low leakage state;

New Partitioned Self-Refresh Technology: Supports various refresh strategies including 1/8, 1/4, 1/2 and full-array refresh, eliminating the need for continuous refresh of the entire memory space and dynamically reducing standby power consumption;

Configurable Drive Strength: Software-adjustable I/O output drive levels, enabling a flexible trade-off between signal integrity and power consumption.

V. CYEL18V2563-200BKXE Interface and Data Transmission Characteristics

Octal xSPI eight-channel DDR architecture, delivering a significant increase in bandwidth compared to traditional four-wire SPI:

Bidirectional clock-synchronised transmission; read and write transactions support linear and wrapped burst modes;

Supports various burst lengths including 16B, 32B, 64B and 128B, with configurable hybrid burst modes;

Equipped with RWDS (Read/Write Data Select) signals to ensure timing stability during high-speed communication, making it ideal for image caching, data stream buffering and real-time signal processing applications;

A low-pin-count serial solution that significantly reduces the number of controller pins required compared to parallel SRAM, alleviating the strain on on-board processor I/O resources.

VI. Typical Application Scenarios for the CYEL18V2563-200BKXE

Aerospace NewSpace (Primary Market)

High-speed data caching for LEO (Low Earth Orbit) satellites and CubeSat payloads

Temporary storage of on-board remote sensing imagery and communication baseband signals

Expansion memory for satellite mission computers and attitude control units

High-End, High-Reliability Industrial / Aerospace

Real-time caching for airborne telemetry and control equipment and unmanned aerial vehicles

Wide-temperature field telemetry and control systems; onboard computing memory for high-end robots

High-reliability edge data buffering for communication base stations

VII. Summary of the Core Value of the CYEL18V2563-200BKXE Product

The CYEL18V2563-200BKXE fills a gap in the commercial space market for high-capacity, high-speed serial, radiation-hardened RAM. Compared to traditional parallel radiation-hardened SRAM, it features fewer pins and a smaller PCB footprint; compared to non-volatile memory, it offers higher sustained read/write bandwidth, making it suitable for temporary computational caches; with a radiation tolerance rating of 100 krad TID, multi-level power management and a 200 MHz DDR 8-wire xSPI interface, it has become the preferred expandable memory solution for next-generation CubeSats and satellite constellation payloads.