company blog about Infineon F4-33MR12W1M1H-B76 1200 V CoolSiC™ MOSFET Fore PACK H-Bridge Module

Shenzhen Mingjiada Electronics Co., Ltd. introduces Infineon F4-33MR12W1M1H-B76 1200 V CoolSiC™ MOSFET Fore PACK H-Bridge Module in new original packaging

Introducing the F4-33MR12W1M1H-B76

This is a first generation 1200 V, 33 mΩ EasyPACK™ 1B CoolSiC™ MOSFET Fore PACK H-bridge module with NTC temperature sensor and PressFIT crimp technology.

Feature Description

Outstanding package, up to 12 mm in height

Advanced wide bandgap (WBG) semiconductor materials

Very low module stray inductance

Enhanced first generation CoolSiC™ MOSFETs

Larger gate drive voltage range

Gate source voltage: +23 V and -10 V

Operating junction temperature (Tvjop): up to 175°C under overload conditions

PressFIT crimp pins

Integrated NTC temperature sensor

Advantages

Excellent module efficiency

System cost advantages

Improved system efficiency

Reduced heat dissipation requirements

Enables higher frequencies

Increased power density

Application Areas

Uninterruptible Power Supplies (UPS)

Energy storage systems

Electric Vehicle Fast Charging

Solar System Solutions

Company Home: www.hkmjd.com