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Infineon GS-065-014-6-L-MR CoolGaN™ Transistor: 700V Gallium Nitride Power Device with Ultra-High Efficiency and Power Density
Latest company news about Infineon GS-065-014-6-L-MR CoolGaN™ Transistor: 700V Gallium Nitride Power Device with Ultra-High Efficiency and Power Density

As applications such as data centers, fast-charging adapters, LED lighting, and switching power supplies place increasingly stringent demands on energy efficiency and power density, traditional silicon-based power devices are gradually approaching their performance limits. Infineon’s GS-065-014-6-L-MR CoolGaN™ transistor, based on advanced gallium nitride (GaN) technology, provides a solution for high-power switching applications that combines ultra-high efficiency with reliability.

 

As a professional distributor of electronic components, Mingjiada Electronics now offers genuine, in-stock GS-065-014-6-L-MR transistors with fast delivery to help customers accelerate their time-to-market.

 

GS-065-014-6-L-MR Product Overview

The GS-065-014-6-L-MR belongs to Infineon’s CoolGaN™ 700V G4 series and is an enhancement-mode (E-mode) GaN-on-Si power transistor. It features a compact 5x6mm PDFN package suitable for surface-mount assembly, making it ideal for high-density PCB designs.

 

Key Specifications:

Drain-Source Voltage (Vdss): 700V (transient withstand voltage 850V)

Continuous Drain Current (Id): 15.2A (Tc=25°C)

On-Resistance (Rds(on)): Typical 95mΩ, Maximum 138mΩ (@4A, 6V)

Gate Charge (Qg): Only 2.7 nC (@6 V), enabling extremely low switching losses

Input Capacitance (Ciss): 85 pF (@400 V)

Operating Temperature Range: -55°C to +150°C

 

Key Technical Advantages

1. Extremely Low Gate Charge and Excellent Figure of Merit (FOM)

With a gate charge of only 2.7 nC, combined with its low on-resistance, the GS-065-014-6-L-MR offers an ultra-low figure of merit (FOM). This enables efficient operation at high frequencies, significantly reducing the size of passive components such as transformers and inductors, thereby enabling power supply designs with ultra-high power density.

2. Zero reverse recovery loss

Unlike silicon-based MOSFETs, GaN transistors lack a body diode, resulting in zero reverse recovery charge. This characteristic is particularly important in hard-switching topologies (such as totem-pole PFC), as it significantly reduces switching losses and electromagnetic interference, improving overall system efficiency.

3. High-Frequency Switching Capability

This device supports switching frequencies exceeding 1 MHz. Combined with controllable rise and fall times, this enables designers to easily meet stringent energy efficiency standards (such as 80 PLUS Titanium) in high-frequency applications.

4. Bottom-Cooled Package

The PDFN 5x6 package features a bottom-cooled design with extremely low thermal resistance (junction-to-case), ensuring efficient heat dissipation in high-power applications and enhancing long-term system reliability.

 

Typical Applications

With the above features, the GS-065-014-6-L-MR is suitable for a wide range of demanding, high-power-density power conversion applications:

Data Center and Server Power Supplies: Improves power module efficiency and reduces cooling costs.

USB-PD Fast Charging Adapters: Enables compact charger designs with high power output.

Switched-Mode Power Supplies (SMPS): Optimizes the performance of various AC-DC and DC-DC converters.

LED Lighting Drivers: Provides highly reliable and long-life constant-current drive solutions.

Wireless Power Transfer: Supports high-frequency resonant topologies to improve transmission efficiency.

Motor Drivers: Enables efficient power control in specific industrial applications.

 

Why Choose Mingjiada Electronics?

Founded in 1996, Shenzhen Mingjiada Electronics Co., Ltd. is an industry-leading authorized independent distributor of electronic components. We maintain a stock of over 2 million SKUs and have established long-term partnerships with more than 500 renowned global brands, including Infineon, ST, TI, and NXP.

 

Genuine Products: All products are sourced through official channels, ensuring reliable quality and certified to ISO 9001 and ISO 14001 standards.

In-Stock Availability: The GS-065-014-6-L-MR is currently in stock and ready for immediate shipment.

Fast Delivery: Leveraging our global supply chain network, we offer ultra-fast delivery within 1–3 days.

 

Conclusion

The Infineon GS-065-014-6-L-MR CoolGaN™ transistor represents the future direction of next-generation power semiconductors, offering an ideal solution for applications requiring high efficiency, high power density, and high switching frequencies. As your trusted partner, Mingjiada Electronics is committed to providing genuine, in-stock products and professional services to help you gain a competitive edge in next-generation power supply design.

 

To request a quote or order samples immediately, please contact the Mingjiada Electronics sales team!

Pub Time : 2026-07-27 10:29:18 >> News list
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