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Infineon IGD03N120S7 1200V 3A IGBT7 S7 Transistors
Latest company news about Infineon IGD03N120S7 1200V 3A IGBT7 S7 Transistors

Infineon IGD03N120S7 1200V 3A IGBT7 S7 Transistors

 

IGD03N120S7 is Hard-switching 1200 V, 3 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-252 package which offers low VCEsat to achieve very low conduction losses in target applications.

 

Specifications of IGD03N120S7

Product Category:IGBTs

Technology:Si

Package/Case:PG-TO252-3

Configuration:Single

Collector- Emitter Voltage VCEO Max:1.2 kV

Collector-Emitter Saturation Voltage:1.65 V

Continuous Collector Current at 25 C:10 A

Pd - Power Dissipation:45 W

Minimum Operating Temperature:- 40 C

Maximum Operating Temperature:+ 150 C

Gate-Emitter Leakage Current:100 nA

 

Features of IGD03N120S7

VCE = 1200 V

IC = 3 A

Low saturation voltage VCEsat = 2 V at Tvj = 150°C

Short circuit ruggedness 8 µs

Wide range of dv/dt controllability

 

Benefits of IGD03N120S7

Compact design for high volt. aux-supply

Reduced EMI min e-magnetic interference

 

Applications of IGD03N120S7

Industrial motor drives and controls

 

Package Drawing PG-TO252-3

latest company news about Infineon IGD03N120S7 1200V 3A IGBT7 S7 Transistors  0

Pub Time : 2024-12-05 13:19:07 >> News list
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