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Infineon IGD03N120S7 1200V 3A IGBT7 S7 Transistors
IGD03N120S7 is Hard-switching 1200 V, 3 A single TRENCHSTOP™ IGBT7 S7 discrete in TO-252 package which offers low VCEsat to achieve very low conduction losses in target applications.
Specifications of IGD03N120S7
Product Category:IGBTs
Technology:Si
Package/Case:PG-TO252-3
Configuration:Single
Collector- Emitter Voltage VCEO Max:1.2 kV
Collector-Emitter Saturation Voltage:1.65 V
Continuous Collector Current at 25 C:10 A
Pd - Power Dissipation:45 W
Minimum Operating Temperature:- 40 C
Maximum Operating Temperature:+ 150 C
Gate-Emitter Leakage Current:100 nA
Features of IGD03N120S7
VCE = 1200 V
IC = 3 A
Low saturation voltage VCEsat = 2 V at Tvj = 150°C
Short circuit ruggedness 8 µs
Wide range of dv/dt controllability
Benefits of IGD03N120S7
Compact design for high volt. aux-supply
Reduced EMI min e-magnetic interference
Applications of IGD03N120S7
Industrial motor drives and controls
Package Drawing PG-TO252-3