company blog about Infineon Introduces CoolGaN™ Transistor GS-065-018-2-L-MR: Extremely High Efficiency and Reliability

Shenzhen Mingjiada Electronics Co., Ltd [Supply] Infineon GS-065-018-2-L-MR CoolGaN™ Transistors 650 V ≤ G3 with very high efficiency and reliability.

Overview:

The GS-065-018-2-L-MR is an enhanced GaN on silicon power transistor. GaN characteristics allow high current, high voltage breakdown, and high switching frequency. The bottom-cooled transistor in an 8x8 mm PDFN package enables the ideal power consumption required for modern USB-C adapters and chargers or server and data centre applications.

Model: GS-065-018-2-L-MR

Year: 24+

Package: PDFN 8x8

Description: Surface Mount N-Channel 650 V 18A (Tc) 8-PDFN (8x8)

Features

• Enhanced HEMT - Normally Closed
• Ultra-fast switching
• No reverse recovery charge
• Reverse conduction capability
• Low gate charge, low output charge
• Excellent commutation strength
• JEDEC compliant (JESD47, JESD22)
• Bottom cooling
• Zero reverse recovery loss
• Source detection pads for optimal gate drive
• Fast, controlled fall and rise times
• RoHS 3(6+4) compliant

Application Areas

• AC-DC
• USB powered - USB PD adapters and chargers
• Power supplies
• Industrial

If you have any request, please feel free to contact Mr Chen by phone:

Tel: +86 13410018555

Email: sales@hkmjd.com

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