company blog about Infineon IPB60R045P7 600V CoolMOS™ P7 N-Channel Power MOSFET Transistors

Infineon IPB60R045P7 600V CoolMOS™ P7 N-Channel Power MOSFET Transistors

In the modern electronics industry, power MOSFET transistors are used as high-efficiency switching devices in a wide range of applications such as power management, industrial control and automotive electronics. Infineon's CoolMOS™ P7 series is highly favoured by the market for its excellent performance and reliability. Shenzhen Mingjiada Electronics Co., Ltd. as a global well-known electronic components distributor, has been supplying Infineon IPB60R045P7 CoolMOS™ P7 N-channel power MOSFET transistors for a long time, providing customers with high quality products and professional services.

Infineon IPB60R045P7 CoolMOS™ P7 Product Overview

1，Product Description Of IPB60R045P7

IPB60R045P7 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

2，Specifications Of IPB60R045P7

Transistor Polarity: N-Channel

Number of Channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 120 V

Id - Continuous Drain Current: 61 A

Rds On - Drain-Source Resistance: 45 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 1.7 V

Qg - Gate Charge: 90 nC

Minimum Operating Temperature: - 55 C

Maximum Operating Temperature: + 150 C

Pd - Power Dissipation: 201 W

Channel Mode: Enhancement

Configuration: Single

Fall Time: 5 ns

Rise Time: 5 ns

Typical Turn-Off Delay Time: 28 ns

Typical Turn-On Delay Time: 10 ns

Unit Weight: 4 g

3，The IPB60R045P7 is a high performance N-channel power MOSFET transistor in Infineon's CoolMOS™ P7 series, featuring advanced MOSFET technology with the following key characteristics:

High voltage capability: The IPB60R045P7 has a high drain-source voltage (Vdss) of up to 650V, making it suitable for high-voltage application scenarios.

Low on-resistance: The IPB60R045P7's extremely low on-resistance significantly reduces conduction losses and improves overall efficiency. At 15.9A current and 10V drive voltage, the on-resistance (Rds On) is only 45mOhm, effectively reducing power consumption.

High Current Carrying Capacity: The IPB60R045P7 meets high power requirements with a continuous drain current (Id) of 48A at 25°C.

Fast switching performance: Thanks to the superjunction technology of the CoolMOS™ P7 platform, the IPB60R045P7 device has extremely low gate charge (QG) and switching losses for high-frequency switching applications.

Wide temperature range: The IPB60R045P7 operates over the -55°C to 150°C temperature range for harsh environments.

Integrated ESD Protection: The IPB60R045P7's built-in Zener diode provides up to 2 kV of electrostatic discharge (ESD) protection, enhancing device reliability.

Optimised package design: The IPB60R045P7 supports a wide range of packages (e.g., D²PAK) for through-hole and surface mount to meet the needs of different application scenarios.

4，Technical Advantages Of IPB60R045P7

High-efficiency design: The IPB60R045P7 achieves higher efficiency by optimising the quality factor (FOM) of the RDS(on) and QG, making it particularly suitable for hard- and soft-switching topologies such as PFC and LLC.

Ease of use: The integrated gate resistor (RG) reduces oscillation sensitivity and simplifies the design flow. In addition, its low ringing tendency and excellent body diode robustness further reduce design complexity.

Excellent thermal performance: Low switching and conduction losses enable the device to maintain stable operation in high-temperature environments, making it suitable for high-power density designs.

5，Features and Benefits Of IPB60R045P7

600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG

Ease-of-use

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency

Ease-of-use

Ease-of-use in manufacturing environments by stopping ESD failures occurring

Integrated RG reduces MOSFET oscillation sensitivity

MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC

Excellent ruggedness during hard commutation of the body diode seen in LLC topology

Suitable for a wide variety of end applications and output powers

Parts available suitable for consumer and industrial applications

6，Applications Of IPB60R045P7

Industrial power supplies: Including server power supplies, communication equipment and industrial SMPS, their high performance and reliability meet the needs of harsh industrial environments.

Consumer Electronics: The IPB60R045P7 is suitable for TV power supplies, adapters and chargers, helping to achieve miniaturisation and high performance design goals.

New Energy: The IPB60R045P7's high performance and low loss features are fully demonstrated in solar inverters and electric vehicle charging posts.

7，Package Outlines Of IPB60R045P7