company blog about Infineon IPD70R600P7S 700V CoolMOS™ N-channel power MOSFET Transistor

Infineon IPD70R600P7S 700V CoolMOS™ N-channel power MOSFET Transistor

Shenzhen Mingjiada Electronics Co., Ltd., as a professional electronic component supplier, provides genuine IPD70R600P7S power MOSFETs.

The IPD70R600P7S 700V CoolMOS™ P7 power MOSFET, an N-channel transistor utilising super-junction technology, offers exceptional switching performance and optimised system cost, making it an ideal choice for efficient power conversion in consumer electronics and industrial applications.

The IPD70R600P7S not only inherits the low-loss characteristics of the CoolMOS series but also achieves significant breakthroughs in ease of use and system integration, providing outstanding solutions for applications such as chargers, adapters, and lighting systems.

【IPD70R600P7S Product Overview】

The Infineon CoolMOS™ P7 series represents a significant breakthrough in high-voltage power MOSFET technology. Utilising super-junction technology pioneered by Infineon, this series is specifically optimised for cost-sensitive applications within the consumer electronics market.

As the 700V device within this series, the IPD70R600P7S strikes an excellent balance between cost-effectiveness and ease of use.

The IPD70R600P7S 700V CoolMOS P7 platform targets cost-sensitive applications such as mobile phone chargers, power adapters, LED lighting, and television power supplies.

These applications demand power conversion devices capable of operating at high switching frequencies while maintaining low temperature rise and high reliability.

CoolMOS P7 technology achieves the highest efficiency standards, supporting high power density designs to help engineers realise slimmer, more compact power solutions.

【IPD70R600P7S Key Parameters and Electrical Characteristics】

The IPD70R600P7S boasts several impressive electrical characteristics that set it apart from its peers.

Housed in a TO-252 package, the IPD70R600P7S occupies minimal PCB space, making it suitable for high-density circuit board designs.

Voltage and Current Ratings: With a drain-source voltage (Vdss) up to 700V and a continuous drain current (Id) of 8.5A, it accommodates diverse high-voltage application environments.

On-Resistance: Under test conditions of 10V gate-source voltage and 1.8A, the on-resistance (RDS(on)) is a mere 600mΩ, effectively reducing conduction losses.

Gate charge characteristics: A gate charge (Qg) of 3.7 nC, combined with low on-resistance, achieves an optimal balance between switching performance and conduction losses.

Operating temperature range: A wide operating temperature range of -40°C to +150°C ensures stable device operation across diverse harsh environments.

The IPD70R600P7S MOSFET features a gate-source voltage (Vgs) range of ±16V, providing ample drive margin. It also incorporates an integrated ESD protection diode, enhancing system reliability and production yield.

【IPD70R600P7S Structural Features and Technical Innovations】

The IPD70R600P7S employs Infineon's seventh-generation CoolMOS™ technology, utilising a super-junction structure to overcome the performance limitations of conventional MOSFETs.

Super-junction technology achieves higher doping concentrations and lower on-resistance by introducing interleaved p-type and n-type pillars within the drift region, while maintaining high breakdown voltage.

Compared to previous generations, the P7 series features meticulously optimised device parameters: Eoss and Qg are reduced by over 50%, while Ciss and Coss are also lowered.

This optimisation significantly reduces switching losses, enabling superior performance in high-frequency switching applications.

The IPD70R600P7S further integrates a Zener diode for electrostatic discharge (ESD) protection, with an ESD tolerance exceeding 2kV. This substantially reduces ESD-related failures during production, thereby enhancing manufacturing yield.

【IPD70R600P7S Performance Advantages】

Ultra-High Energy Efficiency

Benefiting from exceptionally low on-resistance and gate charge, the IPD70R600P7S achieves ultra-low losses, meeting the world's most stringent energy efficiency standards such as Energy Star and the EU Ecodesign Directive.

Superior Thermal Performance

With a dissipation power of 43.1W and outstanding thermal characteristics, the IPD70R600P7S enables continuous operation in high-temperature environments, reducing thermal requirements and simplifying thermal management design.

High Power Density

Rapid switching capability and low-loss characteristics enable power supply designs to operate at higher switching frequencies, significantly reducing the size of passive components such as transformers and filters.

System Cost Optimisation

Despite its outstanding performance, the CoolMOS P7 series maintains a competitive cost structure. By reducing peripheral component and thermal management costs, it lowers overall system BOM expenditure.

【IPD70R600P7S Typical Application Scenarios】

The IPD70R600P7S is suitable for diverse power conversion scenarios, demonstrating exceptional performance particularly in flyback topologies.

Chargers and Adapters

The IPD70R600P7S is ideal for consumer power products such as smartphone chargers and laptop power adapters. Its high switching frequency enables more compact and streamlined designs.

LED Lighting Drivers

In LED TV backlight drivers and general-purpose LED lighting power supplies, the IPD70R600P7S's high efficiency and excellent thermal performance ensure long-term system reliability.

Audio SMPS

The IPD70R600P7S is suitable for switching power supplies in professional audio equipment and home audio systems, where its low-noise characteristics guarantee audio signal integrity.

Auxiliary Power Supplies

The IPD70R600P7S can be employed in auxiliary power circuits within industrial power supplies, delivering stable and reliable power to control circuits and monitoring systems.