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INFINEON IPDD60R050G7 600V N-Channel Power MOSFET Transistors
Product Description Of IPDD60R050G7
IPDD60R050G7 600 V CoolMOS™ G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Specification Of IPDD60R050G7
Transistor Polarity:N-Channel
Number of Channels:1 Channel
Vds - Drain-Source Breakdown Voltage:600 V
Id - Continuous Drain Current:47 A
Rds On - Drain-Source Resistance:50 mOhms
Vgs - Gate-Source Voltage:- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:3 V
Qg - Gate Charge:68 nC
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:278 W
Channel Mode:Enhancement
Configuration:Single
Fall Time:3 ns
Product Type:MOSFETs
Rise Time:6 ns
Typical Turn-Off Delay Time:72 ns
Typical Turn-On Delay Time:22 ns
Unit Weight:763.560 mg
Features Of IPDD60R050G7
Gives best-in-class FOM RDS(on) x Eoss and RDS(on) x Qg
Innovative top-side cooling concept
Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance
TCOB capability of >> 2.000 cycles, MSL1 compliant and total Pb-free
Benefits Of IPDD60R050G7
Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves e iciency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards
Applications Of IPDD60R050G7
Telecom
Server
Solar
PC power
SMPS
1-phase string inverter solutions
48 V power distribution
DIN rail power supplies
Hydrogen electrolysis
Telecommunication infrastructure
Package Outlines