Shenzhen Mingjiada Electronics Co., Ltd. maintains a long-term supply of genuine, in-stock Infineon IPM018N10/IPM018N10NM5LF2—a 100V N-channel power MOSFET featuring OptiMOS™ 5 Linear FET 2 technology. With an on-resistance as low as 1.7 mΩ, a continuous drain current of up to 285 A, and a wide Safe Operating Area (SOA), this device is specifically designed for protection applications—such as hot-swapping, electronic fuses (e-Fuses), and battery management systems (BMS)—that require withstanding high current surges.
Product Overview: The Benchmark for OptiMOS™ 5 Linear FET 2 Technology
The IPM018N10 belongs to Infineon’s OptiMOS™ 5 Linear FET 2 series and serves as the performance benchmark for the 100V voltage class within this platform. The device features a new 8×8 mm mTOLG package (PG-HSOG-4-1), is compatible with 8×8 mm² wing-type package MOSFETs such as the LFPAK88, and is a JEDEC-registered standard package device.
The core design philosophy of this product is to combine ultra-low on-resistance with a wide safe operating area (SOA), optimized specifically for protection circuits that must withstand inrush currents and operate in linear mode.
IPM018N10 Key Technical Specifications
Drain-Source Voltage (VDS): 100 V
Continuous Drain Current (ID): 285 A (Tc)
On-Resistance (RDS(on)): Max. 1.7 mΩ @ 100 A, 15 V
Operating Temperature Range: -55°C to +175°C
Package Type: PG-HSOG-4-1 (8×8 mm mTOLG)
Gate Charge (Qg): 178 nC @ 10V
Input Capacitance (Ciss): 14,000 pF @ 50V
IPM018N10 Key Features and Benefits
Industry-leading on-resistance: RDS(on) as low as 1.4 mΩ to 1.7 mΩ, significantly reducing conduction losses and improving system energy efficiency
Wide Safe Operating Area (SOA): Excellent linear mode operation capability, safely handling inrush currents during startup and fault conditions
High Power Density: Achieves 349 W power dissipation in a compact 8×8 mm package, significantly saving PCB space
Optimized Transfer Characteristics: Narrower Vgs(th) distribution range, improving current sharing when multiple devices are connected in parallel
100% Avalanche Testing: Ensures device reliability under harsh operating conditions
Key Applications
The IPM018N10 is specifically designed to be the ideal choice for surge current protection and high-power-density switching applications:
Battery Management System (BMS): Used for main circuit protection and pre-charge circuits in battery packs to ensure system safety and reliability
Hot-Swap and Electronic Fuses (e-Fuses): Provides smooth current limiting and short-circuit protection, preventing destructive voltage or current spikes during hot-swapping
Server Power Supplies (Server PSUs): Meets the stringent requirements of data centers for high-efficiency, high-power-density power modules
Telecommunications Infrastructure: Suitable for hot-swap protection and power conversion in communication equipment power supplies
To request a product quote, samples, or inventory information, please contact Mingjiada Electronics:
Contact: Mr. Chen
Phone: 13410018555
Email: +86 sales@hkmjd.com
Website: https://www.integrated-ic.com/
Tags: IPM018N10NM5LF2, IPM018N10NM5LF, IPM018N10NM5L, IPM018N10NM5, IPM018N10NM, IPM018N10N, IPM018N10
Your message must be between 20-3,000 characters!
English
