company blog about Infineon IPW60R180P7 High-Efficiency CoolMOS™ N-Channel Power MOSFET Transistor

Infineon IPW60R180P7 High-Efficiency CoolMOS™ N-Channel Power MOSFET Transistor

Shenzhen Mingjiada Electronics Co., Ltd., as a globally renowned distributor of electronic components, has been supplying the Infineon IPW60R180P7 high-performance power MOSFET transistor for an extended period. This IPW60R180P7 N-channel power MOSFET, featuring CoolMOS™ technology, stands out for its exceptional energy efficiency, low on-resistance, and high reliability, making it an ideal choice for power conversion, industrial motor drives, and new energy applications.

IPW60R180P7 Product Overview and Technical Advantages

The IPW60R180P7 is a representative product of the CoolMOS™ P7 series. As an N-channel enhancement-mode power MOSFET, it employs Infineon's advanced Super Junction technology to achieve industry-leading performance metrics at the 600V voltage rating. The IPW60R180P7 device is particularly suitable for switch-mode power supplies and power conversion applications requiring high efficiency and high power density.

Key Electrical Parameters of the IPW60R180P7:

Rated Voltage: 600V - Provides sufficient safety margin for industrial and automotive electronics applications

Continuous Drain Current: 18A (Tc=25°C) - Meets the requirements of medium-power applications

On-resistance (RDS(on)): Typical value 180mΩ (VGS=10V) - Significantly reduces conduction losses

Gate charge (Qg): Typical value 28nC - Enables fast switching and reduces switching losses

Package type: TO-247 - Excellent thermal performance, easy to install and use

The technological innovations of the IPW60R180P7 CoolMOS™ P7 series are primarily reflected in three aspects: First, by optimising the cell structure and process technology, the product of on-resistance and chip area (FOM) has been further reduced; Second, improved body diode characteristics reduce reverse recovery charge (Qrr), thereby lowering switching losses in hard-switching applications; Finally, enhanced avalanche withstand capability and short-circuit robustness improve system reliability.

Compared to the previous generation, the IPW60R180P7 achieves approximately a 15% reduction in on-resistance and a 20% reduction in switching losses in the same package size, making it particularly outstanding in high-frequency applications such as LLC resonant converters, PFC circuits, and motor drives. Its optimised gate drive characteristics also enable seamless compatibility with various controller ICs, simplifying system design.

Application Areas of the IPW60R180P7

Switching Power Supplies (SMPS)

Server/Telecom Power Supplies: Used in AC-DC front-end PFC stages and DC-DC conversion stages

LED Driver Power Supplies: Especially for high-power LED lighting and display applications

Industrial Power Supplies: Including welding equipment, PLC system power supplies, etc.

New Energy and Power Electronics

Photovoltaic inverters: used as switching devices in the DC-AC conversion stage

Electric vehicle charging stations: particularly for on-board chargers (OBC) in the 7kW-22kW range

Energy storage systems (ESS): power switches in battery management systems

Industrial Motor Drives

Variable frequency drives: used in the inverter section for driving AC motors

Servo drives: power stages in precision motion control systems

Power tools: brushless motor drive circuits

Consumer Electronics

High-end audio equipment: Output stage of Class D audio amplifiers

High-power adapters: Such as laptop computer and game console power supplies

Home appliances: Motor control for variable-frequency air conditioners, washing machines, etc.

When using the IPW60R180P7 in actual circuit design, several key points should be noted: First, the gate drive circuit must provide sufficient drive current (typically 2–4 A peak) to ensure fast switching; Second, due to the device's high-frequency characteristics, PCB layout must consider reducing parasitic inductance, particularly in the power loop and gate loop; Finally, in high-voltage applications, sufficient creepage distance and electrical clearance must be ensured to prevent arc discharge.

Technical features of the IPW60R180P7 CoolMOS™ P7 series:

Super Junction structure: By alternately arranging P-type and N-type columns, it significantly reduces on-resistance while maintaining high blocking voltage, breaking through the silicon limits of traditional MOSFETs

Optimised body diode: Reduces reverse recovery charge (Qrr) and reverse recovery time (trr), making it particularly suitable for hard switching and synchronous rectification applications.

Enhanced dv/dt capability: Improves device reliability under high-speed switching conditions and reduces the risk of false triggering.

Temperature stability: The temperature coefficient of on-resistance is optimised to maintain good performance under high-temperature operating conditions.

Compared to similar 600V MOSFETs on the market, the IPW60R180P7 excels in performance balance. Compared to traditional planar MOSFETs, its on-resistance is reduced by over 50%; Compared to earlier super-junction MOSFETs, its switching losses are improved by approximately 30%; and compared to wide-bandgap devices such as GaN, it offers clear advantages in terms of cost-effectiveness and ease of drive, making it particularly suitable for cost-sensitive high-volume applications.

Frequently Asked Questions:

Q: Is the IPW60R180P7 suitable for high-frequency (>200kHz) switching applications?

A: Yes, thanks to its low gate charge and optimised internal structure, this device is highly suitable for high-frequency applications. However, it should be noted that as frequency increases, the proportion of switching losses also increases, so optimising drive conditions and thermal design is necessary.

Q: How can the reliability of the IPW60R180P7 be improved in motor drive applications?

A: Recommendations: 1) Use negative voltage shutdown (-5V to -10V) to prevent unintended turn-on caused by the Miller effect; 2) Add an RC buffer circuit to suppress voltage spikes; 3) Monitor case temperature to prevent overheating.

Q: How should the electrostatic sensitivity issues of the IPW60R180P7 be addressed?

A: This MOSFET is an ESD-sensitive device. When handling it, wear an anti-static wristband, use an anti-static workbench, and store and transport it using anti-static packaging.