company blog about Infineon IPW65R110CFD 650V CoolMOS™ N-Channel Power MOSFET Transistors

Infineon IPW65R110CFD 650V CoolMOS™ N-Channel Power MOSFET Transistors

Shenzhen Mingjiada Electronics Co., Ltd., as a renowned supplier of electronic components, now offers the Infineon IPW65R110CFD 650V CoolMOS™ N-channel power MOSFET transistor. This product represents Infineon's second-generation market-leading high-voltage MOSFET, delivering exceptional performance and reliability that make it an ideal choice for industrial applications.

【IPW65R110CFD Product Overview】

The IPW65R110CFD represents Infineon's second-generation high-voltage CoolMOS™ MOSFET, employing advanced 650V technology with an integrated fast body diode. This device succeeds the 600V CFD technology, delivering further enhancements in energy efficiency.

CoolMOS™ technology is engineered upon the revolutionary Super-Junction principle, transcending the limitations of conventional power MOSFETs. As part of the CFD2 series, the IPW65R110CFD not only inherits the high efficiency of the CoolMOS™ range but also features optimisations across multiple key parameters.

Designed to deliver higher power density and superior switching performance, the IPW65R110CFD offers significantly better competitiveness than rival products through its softer commutation behaviour and enhanced electromagnetic interference characteristics. These attributes facilitate easier design integration while delivering a more competitive price point.

【Key Characteristics and Performance Parameters of IPW65R110CFD】

The IPW65R110CFD boasts several impressive characteristic parameters that directly determine its outstanding performance across diverse applications:

This MOSFET features a drain-source breakdown voltage (VDS) of up to 650V, providing ample safety margin. At 25°C, the continuous drain current (ID) reaches a maximum of 31.2A, while the pulse drain current (IDM) peaks at 99.6A.

Its maximum drain-source on-resistance (RDS(on)) is 110mΩ (tested at 10V gate voltage), with typical values even lower. This translates to reduced conduction losses and enhanced energy efficiency.

The IPW65R110CFD utilises a TO-247 package with a typical gate charge (Qg) of 118 nC (@10V). This low gate charge significantly reduces switching losses. Total power dissipation (Ptot) reaches up to 277.8W, demonstrating exceptional power handling capability.

The IPW65R110CFD also incorporates an ultra-fast body diode with extremely low reverse recovery charge (Qrr), enabling it to limit voltage overshoot during hard switching and thereby enhancing system reliability.

【IPW65R110CFD Product Features】

The IPW65R110CFD employs Infineon's advanced CoolMOS™ CFD2 technology with an integrated fast body diode, delivering significant efficiency improvements over previous generations.

Key characteristics include:

High voltage capability: 650V drain-source breakdown voltage (VDS) provides additional design margin.

Low on-resistance: Maximum RDS(on) of 110mΩ (at 10V VGS) effectively reduces conduction losses.

High current handling capability: Continuous drain current (ID) up to 31.2A, with pulse current (IDpuls) reaching 99.6A.

Rapid switching performance: Switching losses are significantly reduced thanks to low gate charge (Qg of just 118nC) and low reverse recovery charge (Qrr).

Superior thermal characteristics: Maximum power dissipation of 277.8W with thermal resistance (RthJC) as low as 0.45K/W. Utilises the classic TO-247 package for straightforward thermal management.

【IPW65R110CFD Key Advantages】

The IPW65R110CFD transcends a standard MOSFET, delivering multiple design benefits:

Softer commutation behaviour and superior electromagnetic interference (EMI) performance, offering distinct advantages over competing solutions.

Low Qrr during body diode repetitive switching, effectively reducing switching losses.

Self-limiting di/dt and dv/dt capability, enhancing system reliability.

Significantly reduced Qg compared to 600V CFD technology, with improved switching behaviour and a more competitive price point.

【IPW65R110CFD Application Domains】

The IPW65R110CFD is suitable for diverse high-power, high-efficiency applications:

Within communications infrastructure, such as cellular base stations, its high efficiency contributes to reduced operational costs and enhanced system reliability.

Server power supplies represent another critical application area, where the growing power demands of data centres create an urgent need for efficient power conversion.

Within renewable energy sectors, such as solar inverters, the IPW65R110CFD's high-voltage capability and efficiency make it an ideal choice.

Electric vehicle charging infrastructure, particularly rapid charging stations, also benefits from this device's high power handling capacity and efficiency.

Furthermore, it can be utilised in applications including HID lamp ballasts, LED lighting, and electric mobility solutions.