company blog about INFINEON IQE057N10NM6CGSC N-Channel OptiMOS™ 6 MOSFETs Transistor

INFINEON IQE057N10NM6CGSC N-Channel OptiMOS™ 6 MOSFETs Transistor

Product Description of IQE057N10NM6CGSC
IQE057N10NM6CGSC is 100V N-Channel OptiMOS™ 6 MOSFETs Transistor.

Specifications of IQE057N10NM6CGSC
Transistor Polarity：N-Channel
Number of Channels：1 Channel
Vds - Drain-Source Breakdown Voltage：100 V
Id - Continuous Drain Current：98 A
Rds On - Drain-Source Resistance：5.7 mOhms
Vgs - Gate-Source Voltage：- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage：3.3 V
Qg - Gate Charge：26 nC
Minimum Operating Temperature：- 55 C
Maximum Operating Temperature：+ 175 C
Pd - Power Dissipation：125 W
Channel Mode：Enhancement
Fall Time：4.6 ns
Product Type：MOSFETs
Rise Time：1.9 ns
Typical Turn-Off Delay Time：12 ns
Typical Turn-On Delay Time：5.6 ns

Features of IQE057N10NM6CGSC
N-channel, normal level
Very low on-resistance Rps(on)
Excellent gate charge X Ros(on) product (FOM)
Very low reverse recovery charge (Qr)
High avalanche energy rating
175°C operating temperature
Optimized for high frequency switching and synchronous rectification
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
MSL 1 classified according to J-STD-020

Package Outlines of IQE057N10NM6CGSC