Shenzhen Mingjiada Electronics Co., Ltd. now offers long-term stock availability of Infineon's classic power device—the IRFP150MPBF. This 100V single N-channel power MOSFET, housed in a TO-247 M-series package, delivers outstanding current handling capability, extremely low conduction losses, and rugged durability. It stands as the preferred solution for engineers tackling high-voltage, high-current challenges.
Product Core: Infineon's High-Performance HEXFET Power MOSFET
The IRFP150MPBF is a high-performance N-channel enhancement-mode power MOSFET developed by Infineon based on mature planar technology and HEXFET architecture. It is not designed for ultra-high-frequency switching applications but is silicon-optimized specifically for industrial-grade low-frequency, high-power applications below 100kHz, delivering exceptional durability and reliability within a wide Safe Operating Area (SOA).
IRFP150MPBF Core Product Features
1. Fifth-Generation HEXFET Technology
The IRFP150MPBF employs Infineon's advanced fifth-generation HEXFET process technology, achieving extremely low on-resistance per silicon area. This significantly reduces conduction losses and enhances overall system efficiency. Combining the renowned fast switching speed of HEXFET power MOSFETs with a robust device design, this technology provides engineers with highly efficient and reliable power conversion solutions.
2. Exceptional Electrical Performance
High Voltage Rating: Drain-source voltage (Vds) up to 100V provides ample voltage margin for industrial power supplies and motor drives
High Current Capacity: Continuous drain current (Id) up to 42A with enhanced pulse current capability to meet high-power application demands
Ultra-Low On-Resistance: Typical value of only 36mΩ @ 10V gate drive effectively reduces conduction losses and minimizes heat generation
High Power Dissipation: Maximum dissipation of 160W (@25°C heatsink temperature), coupled with TO-247 package for superior thermal performance
3. Fast Switching Characteristics
Low Gate Charge: Total gate charge (Qg) of only 110nC@10V reduces drive power consumption and enhances switching efficiency
Low Input Capacitance: Input capacitance (Ciss) of 1.9nF and reverse transfer capacitance (Crss) of 230pF support high-frequency switching applications
High Switching Speed: Rapid turn-on/turn-off times minimize switching losses, suitable for switching frequencies above 200kHz
4. Rugged and Reliable Package Design
TO-247-3 Package: Classic power package with excellent thermal performance, supports heatsink attachment for enhanced thermal management
Wide Operating Temperature Range: Junction temperature range from -55°C to +175°C, suitable for harsh industrial environments and extreme temperatures
High Reliability: AEC-Q101 certified (automotive grade), meets industrial-grade requirements for long-term stable operation
IRFP150MPBF Product Specifications
Manufacturer: Infineon
Product Type: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 42 A
Rds On - Drain-Source On-Resistance: 36 mOhms
Vgs - Gate-Source Voltage: -20 V, 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate charge: 110 nC
Minimum operating temperature: -55°C
Maximum operating temperature: +175°C
Pd - Power dissipation: 160 W
Channel mode: Enhancement
Ordering Information
If you're seeking a reliable core switching device for your power project, the IRFP150MPBF is a durable, classic choice.
Product Model: IRFP150MPBF
Brand: Infineon
Package: TO-247-3 (TO-247 M Series)
Packaging: Tube, 25 pcs/tube
Minimum Order Quantity: 1 piece (Sample procurement available)
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