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Infineon IRS2181STRPBF 600V High-Side And Low-Side Gate Driver
Latest company news about Infineon IRS2181STRPBF 600V High-Side And Low-Side Gate Driver

Infineon IRS2181STRPBF 600V High-Side And Low-Side Gate Driver

 

Shenzhen Mingjiada Electronics Co., Ltd., as a globally renowned distributor of electronic components, supplies the IRS2181STRPBF—a high-performance half-bridge gate driver capable of simultaneously driving both high-side and low-side power switching devices.

 

IRS2181STRPBF Product Overview】

The IRS2181STRPBF is an 8-SOIC packaged half-bridge gate driver IC specifically designed for driving power MOSFETs and IGBTs. This device integrates both high-side and low-side drive channels, withstanding voltages up to 600V, making it highly suitable for high-voltage applications.

 

Operating within a supply voltage range of 10V to 20V, the IRS2181STRPBF delivers peak sink/source current capabilities of 1.9A and 2.3A respectively, enabling rapid switching of power devices to minimise switching losses.

 

Its non-inverting input simplifies control interface design, whilst a typical delay time of 180ns ensures efficient and precise control response.

 

A further key attribute of the IRS2181STRPBF is its stable operation across an extended temperature range of -40°C to 125°C (with select specifications extending to 150°C), enabling adaptation to demanding industrial environments.

 

Employing a surface-mount package, the IRS2181STRPBF facilitates automated PCB assembly, enhancing manufacturing efficiency.

 

IRS2181STRPBF Key Features and Performance Parameters】

The IRS2181STRPBF incorporates multiple advanced technologies that distinguish it within its product category.

 

It integrates independent high-side and low-side drive channels, supporting non-inverting input logic compatible with 3.3V and 5V CMOS/LSTTL levels.

 

This enables engineers to connect directly to microcontrollers or digital signal processors without requiring additional level-shifting circuitry.

 

Regarding drive capability, the IRS2181STRPBF delivers typical sink currents of 2.3A and source currents of 1.9A – specifications highlighted in the documentation – enabling rapid driving of high-power switching devices to minimise switching losses.

 

Its elevated sink current capability also facilitates swift power device turn-off, preventing unintended conduction.

 

Regarding voltage support, the IRS2181STRPBF operates at a maximum high-side voltage of 600V, making it suitable for 400V DC bus systems. Its operating voltage range of 10V to 20V ensures compatibility with standard 12V/15V driver power supplies.

 

Rapid dynamic response is another key feature of the IRS2181STRPBF: propagation delay is 180ns, with rise and fall times of 40ns and 20ns respectively, effectively reducing dead time and enhancing system efficiency.

 

The device also exhibits broad temperature adaptability, operating within a range of -40°C to 125°C (some documentation indicates a maximum junction temperature of 150°C), ensuring stable performance in harsh environments.

 

latest company news about Infineon IRS2181STRPBF 600V High-Side And Low-Side Gate Driver  0

 

【Internal Structure and Operating Principle of the IRS2181STRPBF

The IRS2181STRPBF employs a half-bridge driver configuration, incorporating independent high-side and low-side drive channels. The high-side employs a floating channel design supporting bootstrap operation.

 

The bootstrap circuit constitutes a key feature of the IRS2181STRPBF, providing a floating power supply to the high-side drive channel via a bootstrap capacitor and diode.

 

When the low-side MOSFET is conductive, the bootstrap capacitor charges; during high-side conduction, the capacitor supplies power to the high-side drive circuit.

 

The IRS2181STRPBF chip integrates an internal under-voltage lockout (UVLO) protection circuit. Should either the high-side or low-side supply voltage fall below the threshold (typically 8.2V), the output shuts down and remains locked until the voltage recovers to a safe level (typically 8.9V). This function effectively prevents linear operation and thermal damage to switching devices caused by insufficient drive voltage.

 

Furthermore, the IRS2181STRPBF employs proprietary HVIC and latch-immune CMOS technology, enhancing the monolithic structure's robustness. Its design exhibits tolerance to negative transient voltages and excellent dV/dt immunity.

 

IRS2181STRPBF Applications】

Power Management Systems: The IRS2181STRPBF is suitable for switching power supplies, uninterruptible power supplies (UPS), and power factor correction circuits, enhancing power conversion efficiency and reliability.

Motor Drive Circuits: The IRS2181STRPBF delivers precise motor control capabilities in industrial motor control, home appliance motor drives, and power tools.

Automotive Electronics Systems: The IRS2181STRPBF is particularly suited for charging systems in plug-in hybrid electric vehicles (PHEVs) and electric vehicles (EVs), meeting the high reliability demands of automotive electronics.

Industrial Control Applications: The IRS2181STRPBF drives power devices in programmable logic controllers (PLCs), servo drives, and industrial automation equipment.

 

Pub Time : 2025-10-27 13:02:46 >> News list
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